Study of the electronic structure of nitrogen doped 3C-SiC with first-principles calculation

被引：0
|
作者：
Song, Jiu-Xu [1 ]
Yang, Yin-Tang [1 ]
Chai, Chang-Chun [1 ]
Liu, Hong-Xia [1 ]
Ding, Rui-Xue [1 ]
机构：
[1] Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an 710071, China
来源：
Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University | 2008年 / 35卷 / 01期
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页码：87 / 91
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