Hot-carrier-induced degradation on 0.1 μm partially depleted silicon-on-insulator complementary metal-oxide-semiconductor field-effect-transistor

被引：0
|
作者：
Yeh, Wen-Kuan [1 ]
Wang, Wen-Han [2 ]
Fang, Yean-Kuen [2 ]
Yang, Fu-Liang [3 ]
机构：
[1] Department of Electrical Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nan-Tzu Dist. 811, Kaohsiung, Taiwan
[2] Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
[3] Taiwan Semiconductor Mfg. Company, Exploratory Device Dept., Device Engineering Division, Science-Based Industrial Park, Hsin-Chu, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 4 B期
关键词：
Band structure - Bipolar transistors - Carrier concentration - Degradation - Electric variables measurement - Electron tunneling - Probes - Silicon on insulator technology - Temperature;
D O I：
10.1143/jjap.42.1993
中图分类号：
学科分类号：
摘要：
Hot-carrier-induced degradation of partially depleted silicon-on-insulator (SOI) complementary metal-oxide-semiconductor field-effect-transistors (CMOSFET)s at various applied voltages and temperatures was investigated with respect to 0.1 μm body-contact (BC-SOI) and floating-body (FB-SOI) devices with 2 nm gate oxide. In our experiment, it is found that the valence-band electron tunneling is the main factor of device degradation for the SOI CMOSFET. In the FB-SOI nMOSFET, both the floating body effect (FBE) and the parasitic bipolar transistor effect (PBT) affect the hot-carrier-induced degradation of device characteristics. For FB-SOI nMOSFET maximum hot-carrier-induced degradation is inversely temperature dependent compared to BC-SOI nMOSFET. Without apparent FBE on pMOSFET, the worst hot-carrier stress condition and temperature dependence of maximum hot-carrier-induced degradation are similar for both 0.1 μm SOI pMOSFETs.
引用
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页码：1993 / 1998
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