Characterization of GaNAs/GaAs and GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy: Effects of ion damage

被引：0
|
作者：
Li, L.H. [1 ]
Pan, Z. [1 ]
Zhang, W. [1 ]
Lin, Y.W. [1 ]
Wang, X.Y. [1 ]
Wu, R.H. [1 ]
机构：
[1] Inst. of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2001年 / 22卷 / 01期
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学科分类号：
摘要：
10
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页码：31 / 34
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