Photoluminescence of SiO2 thin films doped by Tb3+

被引：0
|
作者：
Liu J.-J. [1 ]
Xu M.-X. [1 ]
机构：
[1] Department of Physics, Southeast University, Nanjing
来源：
Liu, Jin-Jin (slliu@seu.edu.cn) | 2016年 / Editorial Office of Chinese Optics卷 / 37期
关键词：
Fluorescence analysis; Silicon-based material; Sol-gel method; Tb[!sup]3+[!/sup] ion;
D O I：
10.3788/fgxb20163712.1464
中图分类号：
学科分类号：
摘要：
SiO2:Tb3+ films were prepared on silicon chips by sol-gel method. The photoluminescence characterizations of the films were studied by fluorescence analysis, and the ways to improve the luminescence were explored and analyzed. Excited by 245 nm, the peaks of transition emissions of 5D4-7FJ (J= 6, 5, 4, 3) of Tb3+ can be observed. The concentration quenching effect of the system with high concentration doping of Tb3+ ions, can be significantly improved after the co-doping of Si or Al3+. The luminescence intensity of the sample doped by Si and Al3+ is twice as that of Al3+-doped sample. In addition, the oxygen vacancy defect introduced by annealing under Ar atmosphere can make the system get significantly enhanced emissions, and the best annealing temperature is 1 200℃. © 2016, Science Press. All right reserved.
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页码：1464 / 1470
页数：6
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