Excess noise characteristics of hydrogenated amorphous silicon avalanche photodiode films using functionally graded structure

被引：0
|
作者：
Sawada, Kazuaki [1 ]
Akiyama, Masahiro [1 ]
Takao, Hidekuni [1 ]
Ishida, Makoto [1 ]
机构：
[1] Dept. of Elec. Electron. Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 5 B期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
12
引用
收藏
页码：2364 / 2368
相关论文
共 50 条
  • [1] Excess noise characteristics of hydrogenated amorphous silicon avalanche photodiode films using functionally graded structure
    Sawada, K
    Akiyama, M
    Takao, H
    Ishida, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4B): : 2364 - 2368
  • [2] Amorphous silicon avalanche photodiode films using a functionally graded superlattice structure
    Sawada, K
    Okumura, Y
    Hatanaka, Y
    Ando, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B): : 1091 - 1095
  • [3] Excess noise characteristics of hydrogenated amorphous silicon p-i-n photodiode films
    Akiyama, M
    Hanada, M
    Takao, H
    Sawada, K
    Ishida, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4B): : 2552 - 2555
  • [4] Excess noise characteristics of amorphous silicon staircase photodiode films
    Sawada, K
    Akiyama, M
    Ishida, M
    APPLIED PHYSICS LETTERS, 1999, 75 (10) : 1470 - 1472
  • [5] Photocurrent multiplication in hydrogenated amorphous silicon staircase photodiode films
    Sawada, K
    Akata, S
    Takeuchi, T
    Ando, T
    APPLIED PHYSICS LETTERS, 1996, 68 (13) : 1835 - 1837
  • [6] Multi-step Multiplication Structure with Low Excess Noise for the AlInAsSb Avalanche Photodiode
    Guo, Yechuan
    Yu, Jing
    Chen, Weiqiang
    Zhu, Lianqing
    Lu, Lidan
    JOURNAL OF ELECTRONIC MATERIALS, 2024, : 8078 - 8086
  • [7] Modeling a novel InP/InGaAs avalanche photodiode structure: Reducing the excess noise factor
    Liu, Guipeng
    Wang, Xin
    Zhao, Jingze
    Chen, Wenjie
    Tian, Yonghui
    Yang, Jianhong
    OPTICS COMMUNICATIONS, 2019, 435 : 374 - 377
  • [8] PHOTOCONDUCTIVE CHARACTERISTICS AND STABILIZATION OF HYDROGENATED AMORPHOUS SILICON FILMS.
    Takahashi, Minoru
    Nozawa, Toshinori
    Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 1987, 70 (10): : 26 - 34
  • [9] Study of 1/f noise in hydrogenated amorphous silicon thin films
    Ho, WY
    Surya, C
    SOLID-STATE ELECTRONICS, 1997, 41 (09) : 1247 - 1249
  • [10] 1/F NOISE IN AMORPHOUS-SILICON AND HYDROGENATED AMORPHOUS-SILICON THIN-FILMS
    BACIOCCHI, M
    DAMICO, A
    VANVLIET, CM
    SOLID-STATE ELECTRONICS, 1991, 34 (12) : 1439 - 1447
12345