Performance comparison between p-i-n and p-n junction tunneling field-effect transistors

被引：0
|
作者：
Yoon, Young Jun [1 ]
Seo, Jae Hwa [1 ]
Kang, In Man [1 ]
机构：
[1] School of Electronics Engineering, Kyungpook National University, Daegu,702-701, Korea, Republic of
来源：
Japanese Journal of Applied Physics | 2018年 / 57卷 / 06期
关键词：
Compendex;
D O I：
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学科分类号：
摘要：
Semiconductor junctions - Gate dielectrics - Tunnel field effect transistors - Ions - Electron tunneling
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