CD-SEM-based metrology for contact lithography and etch

被引：0
|
作者：
Majoni, Stefan [1 ]
Englard, Ilan [2 ]
机构：
[1] Philips Semiconduct. Böblingen, Böblingen, Germany
[2] Applied Meterials Europe, Technology Group, Nijmegen, Netherlands
来源：
Semiconductor International | 2003年 / 26卷 / 04期
关键词：
Algorithms - Data acquisition - Electric potential - Electron emission - Finite element method - Integrated circuits - Lithography - Process control - Scanning electron microscopy - Waveform analysis - WSI circuits;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The evaluation of contract holes in lithography processing using CD-SEM system that enables accurate profile analysis to assess the quality of the control holes are discussed. The newly introduced contact profile grade (PG) analysis methodology allows for a tightened process window and printing of smaller dimensions. It is suggested that the new approach with Voltage Contrast based Discrete Inspection (VC DIN) application make it possible to check for the quality of contacts and vias after etch. The PG algorithms used for characterization and quantification of the contact profile provides a PG value that is a measure for the contrast quality.
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页码：50 / 54
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