A STATIC CURRENT SHARING METHOD FOR PARALLELED SiC MOSFETS

被引：0
|
作者：
Liu X. [1 ]
Du M. [1 ]
Yin J. [1 ]
Ouyang Z. [2 ]
机构：
[1] Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin
[2] Department of Electrical Engineering, Technical University of Denmark, Kgs, Lyngby
来源：
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | 2023年 / 44卷 / 07期
关键词：
current sharing; dynamic analysis; parasitic inductance; silicon carbide; static analysis;
D O I：
10.19912/j.0254-0096.tynxb.2022-0433
中图分类号：
学科分类号：
摘要：
In high current applications such as photovoltaic power generation or wind power generation，due to the static unbalanced current resulting from the mismatch between the power source parasitic inductances and that between the drain parasitic inductances respectively，a static current sharing method for paralleled SiC MOSFETs is proposed in this paper. This paper analyses and solves the problem of the dynamic unbalanced current resulting from the mismatched threshold voltage firstly. And then the problem of the dynamic unbalanced current caused by the mismatched source parasitic inductance is solved on the basis above. Finally，the problem of the static unbalanced current caused by the mismatched drain parasitic inductance is solved on the basis that there is no the dynamic unbalanced current caused by the mismatched threshold voltage and the mismatched source parasitic inductance. The effectiveness of the static current sharing method proposed in this paper is verified by experiments. © 2023 Science Press. All rights reserved.
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页码：147 / 154
页数：7
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