330 GHz monolithic integrated sub-harmonic mixer

被引：0
|
作者：
Yang D. [1 ,2 ]
Wang J. [1 ]
Zhang L. [1 ]
Liang S. [1 ]
Feng Z. [1 ]
机构：
[1] National Key Laboratory of ASIC, Shijiazhuang
[2] The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang
来源：
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | 2019年 / 48卷 / 02期
关键词：
Anti-parallel; Monolithically integrated; Sub-harmonic mixer;
D O I：
10.3788/IRLA201948.0225001
中图分类号：
学科分类号：
摘要：
According to the three-dimensional structure featuring variety of materials around an anti- parallel pair of planar Schottky diodes barrier, the 3D-circuit around the diode barrier can be calculated as a four-port diode modal S-parameter package, and the S-parameters produced by the electromagnetic field solver connecting to the non-linear model of the Schottky diode barrier were incorporated into the non-linear circuit simulator as the diode's whole model, and by this way the whole monolithic mixing circuit's behavior could be modeled more accurately. The monolithically integrated 330 GHz sub-harmonic mixing circuit was fabricated on a 12 μm thick GaAs membrane, and it was suspended in a LO and RF reduced height waveguide split block. The MMIC demonstrated performance with a best double-sideband- mixer conversion loss of 10 dB with 5 mW of LO incident power at 330 GHz. It could withstand some mechanic pressure when its outer environment temperature change, because it was mounted via four flexible beam-leads and a fixed end in a waveguide block. © 2019, Editorial Board of Journal of Infrared and Laser Engineering. All right reserved.
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