Analysis and detection of TDDB degradation for DRAM in 3D-ICs

被引：0

作者：

Jia D. ^{[1
,2
,3
]}

Wang L. ^{[1
,2
,3
]}

Gao W. ^{[1
,2
,3
]}

机构：

[1] School of Information Science & Technology, ShanghaiTech Univ., Shanghai

[2] Shanghai Institute of Microsystem & Information Technology, Chinese Academy of Sciences, Shanghai

[3] School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing

来源：

Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University | 2019年 / 46卷 / 04期

关键词：

Detection; Dynamic random access memory; Reliability; Three dimensional integrated circuit; Time dependent dielectric breakdown;

D O I：

10.19665/j.issn1001-2400.2019.04.025

中图分类号：

学科分类号：

摘要：

3D multicore systems with stacked DRAM are capable of boosting system performance significantly, but accompanied with the key problem of the effect of heat density and heat dissipation on circuit reliability. Aiming to study the TDDB (Time Dependent Dielectric Breakdown) effect in DRAM of 3D-ICs, we adopt a physical-based SPICE model and analyze the statistical TDDB degradation induced by the gate leakage current in peripheral circuits of DRAM. Meanwhile, a TDDB detection design is proposed based on the 45nm process, which is suitable for large scale integration of the memory circuit. And the operation of the detection circuit is analyzed based on the BTI (Bias Temperature Instability) effect. Experimental results show that sense amplifiers are more susceptible to time dependent dielectric breakdown than word-line drivers in DRAM. The proposed TDDB detection design can completely meet the maximum fault coverage rate with good robustness to BTI, and it will send out an alarm signal when TDDB happens in the sense amplifier. © 2019, The Editorial Board of Journal of Xidian University. All right reserved.

引用

页码：182 / 189

页数：7

共 17 条

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