The Vortex Electron and Radiated Vortex Photon of Electromagnetic Wave: Vortex Microwave Photon Radiation

被引：0
|
作者：
Wang Z.-Y. [1 ]
Zhang C. [1 ]
机构：
[1] Laboratory of Avionics, School of Aerospace Engineering, Tsinghua University, Beijing
来源：
Tien Tzu Hsueh Pao/Acta Electronica Sinica | 2024年 / 52卷 / 05期
关键词：
energy level transition radiation; intrinsic OAM; radiation probability; relativity effects; vortex electron; vortex microwave photon; waveguide filter;
D O I：
10.12263/DZXB.20220763
中图分类号：
学科分类号：
摘要：
The theoretical model of cyclotron electron to radiate vortex microwave photons is crucial for the technology of quantum state vortex electromagnetic wave. This paper is the second part of “The Vortex Electron and Vortex Microwave Photon” series, which establishes the theoretical model related to the “Vortex Microwave Photon Radiation”. The radiation by energy level transition of electrons can generate a single microwave photon carrying IOAM (Intrinsic Orbital Angular Momentum). Aiming to clarify this radiation mechanism, the probabilities of Landau energy level transition in non-relativistic and relativistic effects are deduced. Because of the linear relationship between the Landau energy level and the IOAM in the non-relativistic effect, the electron can only radiate the plane wave photons regardless of the initial state of the transition. It is opposed to the relativistic effect, where the microwave photon with rich IOAM modes values can be obtained. This paper also points out that in practical engineering, some cyclotron devices can be used as radiation sources. For mode selection, according to the characteristic of the frequency distinction between different IOAM modes, the iris-embedded waveguide filters can be used for frequency selection. At the same time, the microwave photons of specific IOAM modes can be selected. This paper concludes with a discussion of the quantum and statistical state vortex electromagnetic waves which reveals the corresponding pro and con in wireless communications. © 2024 Chinese Institute of Electronics. All rights reserved.
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页码：1460 / 1468
页数：8
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