Junction Temperature Measurement Method of IGBT Modules Based on VeE-max Under Constant-Current Source Drive Which Decouples Fatigue Effect

被引：0
|
作者：
Yang S. [1 ,2 ]
Sun P. [1 ]
Wang K. [1 ]
Wang X. [1 ]
Huang X. [1 ]
机构：
[1] State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing
[2] Zhuzhou CRRC Times Semiconductor Co. Ltd, Zhuzhou
来源：
Diangong Jishu Xuebao/Transactions of China Electrotechnical Society | 2022年 / 37卷 / 12期
关键词：
Decouple fatigue effect; Insulated gate bipolar transistor(IGBT); Online junction temperature measurement; Temp-sensitive electrical parameter;
D O I：
10.19595/j.cnki.1000-6753.tces.211003
中图分类号：
学科分类号：
摘要：
Online junction temperature measurement of insulated gate bipolar transistors (IGBTs) is of great significance for safe and reliable operation, prolonging service life and thermal management of power electronic devices. However, most of the temperature sensitive electrical parameters (TSEPs) are coupled with the fatigue of IGBT modules. Therefore, this paper proposed a junction temperature measurement method based on the peak value of induced voltage VeE_max under constant current source, which decouples the influence of the bond wire fatigue. This paper analyzed the temperature linearity and temperature sensitivity of VeE_max based on dual pulse experimental platform, then verified the fatigue decoupling function of proposed method by simulating the bond wire fatigue. Finally, the feasibility of online junction temperature measurement is verified by Buck converter. © 2022, Electrical Technology Press Co. Ltd. All right reserved.
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页码：3038 / 3047and3072
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