Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array

被引：0

作者：

Li B. ^{[1
,2
]}

Wang Z.-F. ^{[1
]}

Qiu B.-C. ^{[1
]}

Yang G.-W. ^{[1
,2
]}

Li T. ^{[1
]}

Zhao Y.-L. ^{[1
,2
]}

Liu Y.-X. ^{[1
,2
]}

Wang G. ^{[1
,2
]}

Bai S.-B. ^{[1
]}

Du Y.-Q. ^{[1
,2
]}

机构：

[1] State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an

[2] University of Chinese Academy of Sciences, Beijing

来源：

Wang, Zhen-Fu (wzf2718@opt.ac.cn) | 2020年 / Editorial Office of Chinese Optics卷 / 41期

基金：

中国国家自然科学基金;

关键词：

Energy loss distribution; High temperature; High-power semiconductor laser array; Microchannel; Power conversion efficiency;

D O I：

10.37188/fgxb20204109.1158

中图分类号：

学科分类号：

摘要：

The demand for high peak power semiconductor laser arrays in high temperature working conditions is becoming more and more prominent. The high peak power 960 nm semiconductor laser arrays packaged by microchannel cooler were experimentally studied through the precision temperature control system. A series of output characteristics such as the peak power, power conversion efficiency, working voltage and spectrum are tested from 10℃ to 80℃, combined with theoretical analysis. The energy loss distribution of power conversion efficiency is given at different temperatures. The results show that the power conversion efficiency drops from 63.95% to 47.68% after the operating temperature increases from 10℃ to 80℃, and the proportion of carrier leakage losses increases from 1.93% to 14.85%, which is the main factor that causes the decline in the power conversion efficiency. This study has important guiding significance for high peak power semiconductor laser arrays in high temperature applications and laser chip design. © 2020, Science Press. All right reserved.

引用

页码：1158 / 1164

页数：6

共 16 条

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