Contrast of single-photon and two-photon absorption-induced charges in laser-simulated single event effects

被引：0
|
作者：
Zhang C. [1 ]
An H. [1 ]
Wang Y. [1 ]
Cao Z. [1 ]
机构：
[1] Lanzhou Institute of Physics, National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment, Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou
来源：
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | 2022年 / 51卷 / 09期
关键词：
equivalent LET value; induced charge; single event effect; single-photon absorption; two-photon absorption;
D O I：
10.3788/IRLA20210954
中图分类号：
学科分类号：
摘要：
By using the ways of theoretical derivation and simulation experiments, the quantitative relationship between charge collection ability in pulsed laser simulation experiments is studied when single-photon absorption and two-photon absorption are dominant respectively. The effects of different optical parameters on ionizing charge concentration are analyzed in simulation experiments, and specific parameters such as laser wavelength, pulse width, energy and beam spot are determined. According to the characteristics of single-photon linear absorption and two-photon nonlinear absorption of pulse laser in Si, the quantitative formula of the ratio of charge generated by single-photon and two-photon absorption is derived. Through the verification experiments of 1 064 nm and 1 200 nm laser, it is found that the response pulse and the amount of charge generated have a good linear relationship with the pulse laser energy or energy square, and the charge generated by single-photon absorption is significantly higher than that by two-photon absorption when single-photon absorption and two-photon absorption are dominant respectively. It is proved that the ratio of the charge generated by the two wavelengths is approximately equal to the calculated result. The results show that the amount of charge induced by the 1 200 nm pulsed laser 1 nJ2 is equal to the amount of charge induced by the 1064 nm pulsed laser 0.039 nJ. © 2022 Chinese Society of Astronautics. All rights reserved.
引用
收藏
相关论文
共 17 条
  • [1] Heidel D F, Marshall P W, Pellish J A, Et al., Single-event upsets and multiple-bit upsets on a 45 nm SOI SRAM, IEEE Transactions on Nuclear Science, 56, 6, pp. 3499-3504, (2009)
  • [2] Hales J M, Khachatrian A, Roche N J H, Et al., Simulation of laser-based two-photon absorption induced charge carrier generation in silicon, IEEE Transactions on Nuclear Science, 62, 4, pp. 1550-1557, (2015)
  • [3] Xapsos M A., Applicability of LET to single events in microelectronic structures, IEEE Transactions on Nuclear Science, 39, 6, pp. 1613-1621, (1992)
  • [4] Moss S C, LaLumondiere S D, Scarpulla J R, Et al., Correlation of picosecond laser-induced latchup and energetic particle-induced latchup in CMOS test structures, IEEE Transactions on Nuclear Science, 42, 6, pp. 1948-1956, (1995)
  • [5] Chen D, Kim H, Phan A, Et al., Single-event effect performance of a commercial embedded ReRAM, IEEE Transactions on Nuclear Science, 61, 6, pp. 3088-3094, (2014)
  • [6] Ferlet-Cavrois V, Pouget V, McMorrow D, Et al., Investigation of the propagation induced pulse broadening (PIPB) effect on single event transients in SOI and bulk inverter chains, IEEE Transactions on Nuclear Science, 55, 6, pp. 2842-2853, (2008)
  • [7] Melinger J S, Buchner S, McMorrow D, Et al., Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies, IEEE Transactions on Nuclear Science, 41, 6, pp. 2574-2584, (1994)
  • [8] McMorrow D, Lotshaw W T, Melinger J S, Et al., Subbandgap laser-induced single event effects: Carrier generation via two-photon absorption, IEEE Transactions on Nuclear Science, 49, 6, pp. 3002-3008, (2002)
  • [9] Johnston A H., Charge generation and collection in pn junctions excited with pulsed infrared lasers, IEEE Transactions on Nuclear Science, 40, 6, pp. 1694-1702, (1993)
  • [10] Loveless T D, Massengill L W, Bhuva B L, Et al., A single-event-hardened phase-locked loop fabricated in 130 nm CMOS, IEEE Transactions on Nuclear Science, 54, 6, pp. 2012-2020, (2007)
12