Influence and Optimization of Common Branch Impedance Coupling on Current Sharing of Paralleled SiC MOSFETs

被引：0

作者：

Zhao B. ^{[1
]}

Ke J. ^{[2
]}

Sun P. ^{[1
]}

Cai Y. ^{[1
]}

Zhao Z. ^{[1
]}

机构：

[1] State Key Laboratory of Alternate Electrical Power System With Renewable Energy Sources, North China Electric Power University, Changping District, Beijing

[2] Shanghai Belling Co., Ltd., Xuhui District, Shanghai

来源：

Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2022年 / 42卷 / 07期

关键词：

Branch impedance compensation; Common branch impedance coupling; Current distribution; Silicon carbide MOSFET;

D O I：

10.13334/j.0258-8013.pcsee.210272

中图分类号：

学科分类号：

摘要：

To evaluate the influence of common branch impedance coupling on the dynamic and static current distribution of parallel silicon carbide MOSFET devices, and to improve the current sharing among parallel devices, an equivalent circuit model with critical parasitic resistance and parasitic inductance was established firstly, and the influence of common branch impedance coupling on the dynamic and static current distribution of parallel devices was analyzed. Then, aiming at the problem of different number of parallel devices in different application conditions, the method of impedance compensation for the parallel branches of n devices was proposed. By compensating the drain and source side impedance of the parallel devices, the influence of the common branch impedance coupling effect on the dynamic and static current distribution of the parallel device could be eliminated. Finally, the simulation circuit and experimental platform before and after the branch impedance compensation were built. Results show that by compensating the branch impedance of parallel devices, the sharing of dynamic and static current of parallel devices can be improved, which verifies the effectiveness of the method. © 2022 Chin. Soc. for Elec. Eng.

引用

页码：2638 / 2649

页数：11

共 23 条

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