Pt/ZnGa2O4/p-Si Back-to-Back Heterojunction for Deep UV Sensitive Photovoltaic Photodetection with Ultralow Dark Current and High Spectral Selectivity

被引：0
|
作者：
Zhang, Dan [1 ]
Lin, Zhuogeng [2 ]
Zheng, Wei [2 ]
Huang, Feng [2 ]
机构：
[1] School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou,510006, China
[2] State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangdong, Guangzhou,510275, China
来源：
ACS Applied Materials and Interfaces | 2022年 / 14卷 / 04期
基金：
中国国家自然科学基金;
关键词：
Display devices - Photons - Platinum - Schottky barrier diodes - Gallium compounds - Photodetectors - Silicon compounds - Dark currents;
D O I：
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学科分类号：
摘要：
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页码：5653 / 5660
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