Influence of Heat Dissipation Baseplate on Power Cycling Lifetime of IGBT Modules

被引：0
|
作者：
Chang G. [1 ,2 ]
Luo H. [2 ]
Fang C. [2 ]
Chen J. [2 ]
Huang Y. [1 ]
机构：
[1] State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electrical Power University, Beijing
[2] Zhuzhou CRRC Times Semiconductor Co. Ltd, Zhuzhou
来源：
Diangong Jishu Xuebao/Transactions of China Electrotechnical Society | 2024年 / 39卷 / 08期
关键词：
finite element analysis; heat dissipation baseplate; Insulated gate bipolar transistor (IGBT); power cycling lifetime; thermal impedance;
D O I：
10.19595/j.cnki.1000-6753.tces.230099
中图分类号：
学科分类号：
摘要：
The insulated gate bipolar transistor (IGBT) module is the core component of an electric vehicle converter. Power cycling lifetime is a key index for IGBT module reliability. In engineering, the Pin-Fin baseplate of the IGBT module is used to reduce thermal resistance and operating junction temperature to achieve reliability improvement. This paper evaluates the reliability differences between the flat baseplate module and the Pin-Fin baseplate module. Firstly, the power cycling lifetime test is carried out on IGBT modules with different heat dissipation baseplates. After the experiment, the samples are dissected and analyzed to determine failure mode. Secondly, a three-dimensional finite element analysis model of the same size is established, and the simulation calculation of electro-thermal-mechanical multi-physical field coupling is carried out. The load conditions of the simulation are the same as those of the power cycling test. The temperature distribution, the temperature change process of the chip junction, and the plastic strain of the bonding wires are obtained. Finally, the influence of different heat dissipation baseplates on the power cycling lifetime is obtained by comparing the experimental and simulation results. The experimental results show that the collector-emitter saturation voltage increase ratio is greater than the thermal resistance increase ratio when the module fails under the second-level power cycling test condition. The sudden change of saturation voltage was also observed during the test, indicating that the failure mode of the module was bonding wires lift-off. Under the same thermal test conditions, the power cycling lifetime of the flat baseplate module is 9.2% higher than that of the Pin-Fin baseplate module. The disassembly analysis shows that the lift-off bonding wires of the Pin-Fin module are mainly concentrated in the center of the chip, while the flat baseplate module is dispersed. The finite element analysis shows that the temperature difference of the Pin-Fin module is larger, and the temperature distribution is more uneven than that of the flat baseplate module. Under the same average junction temperature change, the maximum plastic deformation of Pin-Fin baseplate module bonding wires is higher than that of flat baseplate module after a long time cumulative effect, so that the power cycling life of Pin-Fin baseplate module is lower than that of flat baseplate module. The following conclusions can be obtained. (1) Regarding package reliability, under the same junction temperature fluctuation and maximum junction temperature, compared with the traditional baseplate module, the surface temperature distribution of Pin-Fin baseplate module chips is more uneven, the maximum temperature of chips is higher, and the plastic deformation of center bonding wires is larger, resulting in a shorter power cycling lifetime. (2) Regarding application reliability, under the same output current, the service lifetime of the Pin-Fin baseplate module is higher than that of the flat baseplate module due to its lower thermal resistance and lower fluctuation of its maximum junction temperature. (3) To meet multiple application requirements, the module design needs to consider the current capacity and reliability capability comprehensively. For the Pin-Fin baseplate module, measures should be taken to improve its reliability while replacing the heat dissipation baseplate to reduce the thermal resistance of the module and achieve the same power cycling life. © 2024 China Machine Press. All rights reserved.
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页码：2485 / 2495
页数：10
相关论文
共 25 条
  • [1] Zhang Jun, Zhang Li, Cheng Yu, Review of the lifetime evaluation for the IGBT module, Transactions of China Electrotechnical Society, 36, 12, pp. 2560-2575, (2021)
  • [2] Liu Guoyou, Huang Jianwei, Qin Rongzhen, Et al., Development of large size IGBT chip with high power capacity of 4500V/600A, Transactions of China Electrotechnical Society, 36, 4, pp. 810-819, (2021)
  • [3] Liu Guoyou, Luo Haihui, Zhang Hongxin, Et al., High performance 750A/6500V IGBT module based on full-copper processes, Transactions of China Electrotechnical Society, 35, 21, pp. 4501-4510, (2020)
  • [4] Wei Yunhai, Chen Minyou, Lai Wei, Et al., Review on active thermal control methods based on junction temperature swing smooth control of IGBTs, Transactions of China Electrotechnical Society, 37, 6, pp. 1415-1430, (2022)
  • [5] Hussein K, Ishihara M, Miyamoto N, Et al., New compact, high performance 7th generation IGBT module with direct liquid cooling for EV/HEV inverters, 2015 IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 1343-1346, (2015)
  • [6] Bayerer R, Herrmann T, Licht T, Et al., Model for power cycling lifetime of IGBT modules-various factors influencing lifetime, 2008 5th International Conference on Integrated Power Electronics Systems, pp. 1-6, (2011)
  • [7] Deng Erping, Chen Jie, Zhao Yushan, Et al., Power cycling capability of high power IGBT modules for flexible HVDC system, 2020 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, pp. 1011-1018, (2020)
  • [8] Zeng Zheng, Li Xiaoling, Lin Chaobiao, Et al., Electric-thermal-stress oriented multi-objective optimal design of power module package, Proceedings of the CSEE, 39, 17, pp. 5161-5171, (2019)
  • [9] Chen Jie, Deng Erping, Zhang Yiming, Et al., Influence and mechanism analysis of load pulse duration on failure mode of high power IGBT module under power cycling condition, Proceedings of the CSEE, 40, 23, pp. 7710-7721, (2020)
  • [10] Zhao yushan, Deng erping, Pan maoyang, Et al., Influence of chip surface temperature gradient on the power cycling lifetime, Proceedings of the CSEE, (2023)
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