Resonant Gate Driver with Asymmetrical Voltage and Two Synchronous Drive Signals for GaN Switches

被引：0
|
作者：
Gao S. [1 ]
Wang Y. [1 ]
Liu Y. [1 ]
Xu D. [1 ]
机构：
[1] Department of Electrical Engineering, Harbin Institute of Technology, Harbin
来源：
Diangong Jishu Xuebao/Transactions of China Electrotechnical Society | 2021年 / 36卷 / 20期
关键词：
GaN; Loss analysis; Resonant gate driver; Resonant inductor;
D O I：
10.19595/j.cnki.1000-6753.tces.L90138
中图分类号：
学科分类号：
摘要：
Commercial gallium nitride (GaN) switches are widely used in power electronic converters recently years due to their advantages such as fast switching speed and low turn-on resistance. Accordingly, resonant gate drivers are adopted to reduce drive loss in high frequency and low power applications. However, different from Si switches, the turn-on threshold voltage of GaN switches is quite low and GaN switches have no body diode, which causes large reverse voltage drop. Therefore, traditional resonant gate drivers are not suitable for GaN switches. In order to solve the drive signal oscillation caused by parasitic parameters in high frequency applications, a resonant gate driver with asymmetrical voltage is proposed in this paper. Besides, for applications that require two synchronous switches, such as switch inductor converters, a transformer with two groups of secondary sides is added. The working principles are presented and parameters are optimized for lower loss. A 1MHz prototype is designed for experimental verification. The experimental results are in good agreement with the theoretical analysis. © 2021, Electrical Technology Press Co. Ltd. All right reserved.
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页码：4185 / 4193
页数：8
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  • [1] Wu Qunfang, Wang Qin, Zhu Jinyi, Et al., Dual-channel push-pull isolated resonant gate driver for high-frequency ZVS full-bridge converters, IEEE Transactions on Power Electronics, 34, 5, pp. 4019-4024, (2019)
  • [2] Zhao Qinglin, Cui Shaowei, Yuan Jing, Et al., Resonant drive technology and reverse conduction characteristics of low voltage GaN devices, Transactions of China Electrotechnical Society, 34, S1, pp. 133-140, (2019)
  • [3] Zhang Jianzhong, Wu Haifu, Zhang Yaqian, Et al., A resonant gate driver for SiC MOSFET, Transactions of China Electrotechnical Society, 35, 16, pp. 3453-3459, (2020)
  • [4] Liu Jiaomin, Li Jianwen, Cui Yulong, Et al., Power MOSFET gate driver of the high frequency resonant inverter, Transactions of China Electrotechnical Society, 26, 5, pp. 113-118, (2011)
  • [5] Sun Bainan, Zhang Zhe, Andersen M A E., A comparison review of the resonant gate driver in the silicon MOSFET and the GaN transistor application, IEEE Transactions on Industry Applications, 55, 6, pp. 7776-7786, (2019)
  • [6] Gao Shanshan, Wang Yijie, Xu Dianguo, A high frequency high voltage gain modified Sepic converter, Transactions of China Electrotechnical Society, 34, 16, pp. 3366-3372, (2019)
  • [7] Liu Jiabin, Xiao Xi, Mei Hongwei, Soft switching analysis of dual active bridge DC-DC converter based on GaN-HEMT device, Transactions of China Electrotechnical Society, 34, S2, pp. 534-542, (2019)
  • [8] Li Shucheng, Liu Bangyin, Jiang Qing, Et al., Performance analysis of bidirectional CLLLC resonant converter with synchronous PWM control strategy, Transactions of China Electrotechnical Society, 34, S2, pp. 543-552, (2019)
  • [9] Xiao Long, Wu Liang, Li Xin, Et al., Optimal design of planar magnetic integrated matrix transformer for high frequency LLC converter, Transactions of China Electrotechnical Society, 35, 4, pp. 758-766, (2020)
  • [10] Guan Yueshi, Shi Zhenyu, Wang Yijie, Et al., An isolated high frequency DC-DC converter based on Class E resonant circuit, Transactions of China Electrotechnical Society, 35, 22, pp. 4750-4760, (2020)
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