Progress of High-efficiency Perovskite Quantum Dot Light-emitting Diodes

被引：0
|
作者：
Pi H.-H. [1 ]
Li G.-H. [1 ]
Zhou B.-L. [1 ]
Cui Y.-X. [1 ]
机构：
[1] College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2021年 / 42卷 / 05期
基金：
中国国家自然科学基金;
关键词：
Current efficiency; External quantum efficiency; Perovskite LED; Photoluminescence quantum yield; Quantum dots;
D O I：
10.37188/CJL.20200406
中图分类号：
学科分类号：
摘要：
Perovskite quantum dots(QDS) are attracting materials for realizing new efficient light-emitting diode(LED) due to their merits such as high photoluminescence quantum yield, adjustable luminous spectrum, narrow spectral width, high defect tolerance and unique quantum confined effect. This paper introduces the latest progress in the research of perovskite-based quantum dot light-emitting diodes in recent years. Firstly, the unique crystal structure of perovskite quantum dot and the working principle of perovskite light-emitting device are introduced. Secondly, the method of synthesizing high photoluminescence quantum yield(PLQY) quantum dot and several methods of improving the LED efficiency of perovskite quantum dot are described. Finally, we analyzed the challenges faced by perovskite QDS such as instability, toxicity and the prospects for developing efficient LED for applications in display and lighting. This review is expected to provide helpful insights for promoting the efficiency and safety of QDS. © 2021, Science Press. All right reserved.
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页码：650 / 667
页数：17
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共 104 条
  • [1] BADE S G R, LI J Q, SHAN X, Et al., Fully printed halide perovskite light-emitting diodes with silver nanowire electrodes, ACS Nano, 10, 2, pp. 1795-1801, (2016)
  • [2] MADHUSOODHANAN S, SABBAR A, ATCITTY S, Et al., High-temperature optical characterization of GaN-based light-emitting diodes for future power electronic modules, Phys. Status Solidi A, 217, 7, (2020)
  • [3] GUO W L, DENG J, WANG J L, Et al., GaN-based light emitting diode with graphene/indium antimony oxide composite transparent electrode, Acta Phys. Sinica, 68, 24, (2019)
  • [4] LU Q, MARSHALL A, KRIER A., Metamorphic integration of GaInAsSb material on GaAs substrates for light emitting device applications, Materials, 12, 11, (2019)
  • [5] HUANG H W, KAO C C, CHU J T, Et al., Investigation of GaN LED with Be-implanted Mg-doped GaN layer, Mater. Sci. Eng. B, 113, 1, pp. 19-23, (2004)
  • [6] XU H, WANG X C, LI Y, Et al., Prominent heat dissipation in perovskite light-emitting diodes with reduced efficiency droop for silicon-based display, J. Phys. Chem. Lett, 11, 9, pp. 3689-3698, (2020)
  • [7] KIM M R, CHOI H W, BARK C W., Low-temperature thermally evaporated SnO<sub>2</sub> based electron transporting layer for perovskite solar cells with annealing process, J. Nanosci. Nanotechnol, 20, 9, pp. 5491-5497, (2020)
  • [8] DUAN L S, CHEN Y, YUAN J, Et al., Dopant-free X-shaped D-A type hole-transporting materials for p-i-n perovskite solar cells, Dyes Pigments, 178, (2020)
  • [9] JUNG D H, OH Y J, NAM Y S, Et al., Effect of layer number on the properties of stable and flexible perovskite solar cells using two dimensional material, J. Alloys Compd, 850, (2021)
  • [10] GAO C, HU Z Y, YANG C, Et al., High-temperature induced iodide and bromide ions filling lattice for high efficient all-inorganic perovskite solar cells, J. Alloys Compd, 848, (2020)
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