Sintering Aids for Silicon Carbide Ceramics: Action Mechanisms and Research Progress

被引：0
|
作者：
Fu Z. [1 ]
Zhao J. [2 ]
Dai Y. [3 ]
Liang J. [1 ]
Liu R. [2 ]
机构：
[1] Key Laboratory for Advanced Ceramics and Machining Technology of the Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin
[2] Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing
[3] School of Materials, Sun Yat-sen University, Guangzhou
来源：
Cailiao Daobao/Materials Reports | 2021年 / 35卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Ceramics; Silicon carbide; Sintering; Sintering aids;
D O I：
10.11896/cldb.19090107
中图分类号：
学科分类号：
摘要：
Silicon carbide (SiC) ceramics are widely used in petrochemical, aerospace and heat exchangers owing to its excellent properties, such as high strength, high hardness and excellent resistance to oxidation, corrosion and thermal shock. In addition, SiC is also considered to be a structural component of future fission and fusion reactors because of its low activation under neutron irradiation conditions. However, pure dense SiC ceramics can only be obtained by sintering at high temperature with high pressure due to the high covalent bonding of Si-C bonds and low self-diffusion. In order to promote the densification of SiC and to alleviate the sintering conditions, the addition of sintering aids is crucial. In this paper, the thermodynamic conditions by adding sintering aids are discussed and the mechanisms of sintering aids to promoting SiC densification under different sintering conditions are summarized. The classification and the research progress of sintering aids for SiC ceramics in recent years are introduced. Future prospects of the research and development trend of the densification SiC ceramics are proposed. © 2021, Materials Review Magazine. All right reserved.
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页码：01077 / 01081
页数：4
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