Modeling of SiC Power MOSFET Considering the Influence of Working Temperature

被引：0
|
作者：
Teng Y. [1 ]
Gao Q. [1 ]
Zhang Q. [1 ]
Xu D. [1 ]
机构：
[1] Department of Electrical Engineering, Harbin Institute of Technology, Harbin, 150001, Heilongjiang
来源：
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2020年 / 40卷 / 03期
基金：
国家重点研发计划;
关键词：
MATLAB/Simulink model; SiC power MOSFET; Variable temperature parameter model; Whole working region;
D O I：
10.13334/j.0258-8013.pcsee.190302
中图分类号：
学科分类号：
摘要：
A modeling method for the variable temperature in the whole working region based on MATLAB/Simulink was proposed. Based on the Si lateral double-diffused MOSFET model, the operating characteristic curves of SiC power MOSFET in the saturation zone was expanded by supplementary experiments. The model parameters were extracted by mathematical fitting according to the working characteristics of SiC power MOSFET. The modeling process was free from the dependence on physical parameters, while retaining the physical meaning of each parameter. Output characteristic, transfer characteristic, threshold voltage, on-resistance and switching loss of the device were verified by the experimental test at different voltages, currents and temperatures (from 25℃ to 125℃). The simulation results based on the MATLAB/Simulink model are consistent with the experimental test results, and the switching loss error was within 7%, which verified the accuracy and effectiveness of the proposed model. The system performance analysis and loss analysis in practical application of SiC power MOSFET could be estimated according to the proposed model. © 2020 Chin. Soc. for Elec. Eng.
引用
收藏
页码：932 / 941
页数：9
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