SiC Power Module Packaging Technologies and Prospects

被引：0
|
作者：
Cai W. [1 ]
Yang M. [1 ]
Liu Y. [2 ]
Li D. [3 ]
机构：
[1] School of Electrical and Electronic Engineering, Harbin University of Science and Technology, Harbin
[2] School of Materials Institute, Harbin University of Science and Technology, Harbin
[3] NIO Co., Ltd., Shanghai
来源：
Qiche Gongcheng/Automotive Engineering | 2022年 / 44卷 / 04期
关键词：
Double-sided heat dissipation; Failure mechanism; Module packaging; Parasitic parameters; Power module; Silver sintering technology; Sintering packaging;
D O I：
10.19562/j.chinasae.qcgc.2022.04.018
中图分类号：
学科分类号：
摘要：
The integration, high-frequency, and high-efficiency for SiC MOSFET devices set a higher requirement on the packaging form and processes of power module. In this paper, the structural optimization and technological innovations of packaging forms in recent years are summarized, including the influence of the length, width, and number of metal bonding wires of bonded power modules on parasitic inductance, and the effects of the area and height of the ceramic layer in direct bonded copper ceramic substrates on parasitic capacitance, and the achievements in parasitic parameter optimization by using stacked commutation technology. The influences of the thickness and shape of the buffer layer of the double-sided heat dissipation structure on the heat dissipation indicator, stress and deformation are reviewed. The failure mechanism and solving measures of power modules are summed up, providing references for the safe operation of the module. Finally, the requirements and key issues of advanced silver sintering technologies are discussed, with the development direction of sintering packaging technologies and materials forecasted. © 2022, Society of Automotive Engineers of China. All right reserved.
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页码：638 / 648
页数：10
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