Photoelectric Characterization Technique Based on Terahertz Semiconductor Quantum-Well Devices and Its Applications

被引：0
|
作者：
Tan Z. [1 ,2 ]
Cao J. [1 ,2 ]
机构：
[1] Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai
[2] Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing
来源：
Zhongguo Jiguang/Chinese Journal of Lasers | 2019年 / 46卷 / 06期
关键词：
Fast modulation and detection; Photoelectric characterization; Quantum-cascade laser; Quantum-well photodetector; Terahertz technology;
D O I：
10.3788/CJL201946.0614004
中图分类号：
学科分类号：
摘要：
Photoelectric characterization technique is an important foundation of the terahertz technology. It covers photoelectric device characterization, spectral measurement, beam improvement, and communication and imaging applications in terahertz region, and plays an important role in terahertz application field. Firstly, the working principle and the latest progress of two kinds of terahertz semiconductor quantum devices are presented. Then, their applications in terahertz photoelectric characterization such as pulse light power measurement and detector responsivity calibration, and their applications in terahertz fast modulation and detection as well as terahertz scanning imaging systems are summarized. Finally, the improvements of the above characterization techniques are also introduced and discussed, including the methods to improve the terahertz light beam quality and the effective detection area of detectors. The potential applications of devices and characterization techniques in the future are also presented. © 2019, Chinese Lasers Press. All right reserved.
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