Effect of Oxygen Plasma Treatment on Monolayer Self-assembled SiO2 Nanosphere Thin Films on GaAs Surface

被引：0

作者：

Wang Z.-D. ^{[1
]}

Liu Y. ^{[1
]}

Peng X.-C. ^{[1
,2
]}

Zou J.-J. ^{[1
]}

Zhu Z.-F. ^{[1
]}

Deng W.-J. ^{[1
]}

机构：

[1] Engineering Research Center of New Energy Technology of Jiangxi Province, East China University of Technology, Nanchang

[2] Engineering Research Center of Nuclear Technology Application, East China University of Technology, Ministry of Education, Nanchang

来源：

Peng, Xin-Cun (xcpeng@ecit.cn) | 1600年 / Editorial Office of Chinese Optics卷 / 41期

基金：

中国国家自然科学基金;

关键词：

ICP etch; Oxygen plasma; SiO[!sub]2[!/sub] nanospheres;

D O I：

10.3788/fgxb20204103.0253

中图分类号：

学科分类号：

摘要：

Two-dimensional nano-array structures have been widely used in many optoelectronic devices due to their excellent optical performances. In this work, nano-pillar arrays were fabricated on GaAs substrate by self-assembled monolayer SiO2 nanospheres etching. Monolayer SiO2 nanospheres were self-assembled on GaAs substrate by rotary coating. The order of the nanosphere distribution was improved by improving the oxygen plasma hydrophilic treatment process of GaAs surface, and a large area of tightly arranged monolayer nanosphere was obtained under the power ratio of 100 W+80 W, the chamber pressure of 4 Pa, the oxygen flow rate of 20 mL/min and the etching time of 1 200 s. Taken this monolayer nanosphere as the etching mask, highly ordered GaAs nano-pillar array was then fabricated by inductively coupled plasma etching. The reflectivity of the GaAs nano-pillar array structure was found to be about 5% in a specific band by spectral analysis, which shows that light absorption can be enhanced effectively and can further match the requirements of actual optoelectronic devices. © 2020, Science Press. All right reserved.

引用

页码：253 / 258

页数：5

共 23 条

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