Femtosecond-laser induced two-photon absorption of GaN and AlxGa1-xN thin films: Tuning the nonlinear optical response by alloying and doping

被引：0

作者：

Vivas, M.G. ^{[3
]}

Manoel, D.S. ^{[1
]}

Dipold, J. ^{[1
]}

Martins, R.J. ^{[1
]}

Fonseca, R.D. ^{[4
]}

Manglano-Clavero, I. ^{[2
]}

Margenfeld, C. ^{[2
]}

Waag, A. ^{[2
]}

Voss, T. ^{[2
]}

Mendonca, C.R. ^{[1
]}

机构：

[1] São Carlos Institute of Physics, University of São Paulo, São Carlos, SP, Brazil

[2] Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, Technische Universität Braunschweig, Braunschweig, Germany

[3] Laboratório de Espectroscopia Óptica e Fotônica, Universidade Federal de Alfenas, Poços de Caldas,MG, Brazil

[4] Departamento de Fisica, Universidad Popular del Cesar, Barrio Sabana, Valledupar,Cesar,2000004, Colombia

来源：

Journal of Alloys and Compounds | 2020年 / 825卷

基金：

巴西圣保罗研究基金会;

关键词：

III-V semiconductors - Optical properties - Two photon processes - Semiconductor lasers - Aluminum alloys - Gallium nitride - Nonlinear optics - Semiconductor doping - Photons - Wide band gap semiconductors - Alloying - Semiconductor alloys - Femtosecond lasers;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 20 条

[1] Femtosecond-laser induced two-photon absorption of GaN and AlxGa1-xN thin films: Tuning the nonlinear optical response by alloying and doping
Vivas, M. G.
Manoel, D. S.
Dipold, J.
Martins, R. J.
Fonseca, R. D.
Manglano-Clavero, I
Margenfeld, C.
Waag, A.
Voss, T.
Mendonca, C. R.
JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 825
[2] Influence of silicon doping on vacancies and optical properties of AlxGa1-xN thin films
Slotte, J.
Tuomisto, F.
Saarinen, K.
Moe, C. G.
Keller, S.
DenBaars, S. P.
APPLIED PHYSICS LETTERS, 2007, 90 (15)
[3] Optical absorption of nitrogen vacancy in proton irradiated AlxGa1-xN thin films
Zhou, QY
Manasreh, MO
Pophristic, M
Ferguson, IT
Weaver, BD
GAN AND RELATED ALLOYS-2001, 2002, 693 : 395 - 400
[4] Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN
North Carolina State Univ, Raleigh, United States
Diamond Relat Mater, 2 (288-294):
[5] Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN
Hanser, AD
Nam, OH
Bremser, MD
Thomson, DB
Gehrke, T
Zheleva, TS
Davis, RF
DIAMOND AND RELATED MATERIALS, 1999, 8 (2-5) : 288 - 294
[6] Nonlinear two-photon absorption properties induced by femtosecond laser with the films of two novel anthracene derivatives
Li, Liang
Wu, Yiqun
Wang, Yang
CHINESE OPTICS LETTERS, 2012, 10 (10)
[7] Nonlinear two-photon absorption properties induced by femtosecond laser with the films of two novel anthracene derivatives
李亮
吴谊群
王阳
Chinese Optics Letters, 2012, 10 (10) : 53 - 56
[8] Nonlinear optical properties in the laser-dressed two-level AlxGa1-xN/GaN single quantum well
Panda, Monalisa
Das, Tapaswini
Panda, B. K.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2018, 32 (04):
[9] Two-photon absorption and nonlinear optical properties in undoped and doped ferroelectric thin films
Zhang, MS
Zhang, WF
Zhang, J
Zhang, P
Yin, Z
MULTIPHOTON ABSORPTION AND NONLINEAR TRANSMISSION PROCESSES: MATERIALS, THEORY, AND APPLICATIONS, 2003, 4797 : 293 - 299
[10] Plasmon-Enhanced Two-Photon Absorption of Infrared Femtosecond Laser Pulses in Thin Gold Films
Kudryashov, S., I
Danilov, P. A.
Bezhanov, S. G.
Rudenko, A. A.
Ionin, A. A.
Uryupin, S. A.
Umanskaya, S. F.
Smirnov, N. A.
JETP LETTERS, 2019, 109 (06) : 382 - 386

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