80W GaN Power Amplifier with Ultra Wideband of 1~4GHz

被引：0
|
作者：
Yang W.-Q. [1 ]
Zhong S.-C. [1 ]
Li Y.-C. [1 ]
机构：
[1] Nanjing Electronic Device Institute, Nanjing, 210016, Jiangsu
来源：
Tien Tzu Hsueh Pao/Acta Electronica Sinica | 2019年 / 47卷 / 08期
关键词：
Chebyshev converter structure; GaN; Internal matching; Ultra wideband;
D O I：
10.3969/j.issn.0372-2112.2019.08.026
中图分类号：
学科分类号：
摘要：
Based on the 0.25μm GaN HEMT process platform of Nanjing Institute of Electronics Technology, an ultra-wideband power amplifier with an operating frequency of 1~4GHz and a continuous wave output power greater than 80W is designed.The amplifier uses a low-pass LC matching network to achieve the conversion of the input and output impedance of the die to the real impedance, and the ultra-wideband matching is realized by the Chebyshev converter structure; after the single input/output port is matched to 100Ω, the two direct circuits are synthesized to 50Ω.The method achieves power synthesis of a high-power ultra-wideband power amplifier.The amplifier has a bias voltage of 32V and a quiescent current of 0.4A.The test results show that in the bandwidth of 1~4GHz, the continuous wave output power of the amplifier is greater than 49.05dBm (80.3W), the maximum output power is 50.6dBm (114.8W), the saturation power gain is greater than 9dB, and the power flatness is less than ±0.8dB.The maximum drain efficiency is 62.5%. © 2019, Chinese Institute of Electronics. All right reserved.
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页码：1803 / 1808
页数：5
相关论文
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