Computational investigation on the structural, electronic and optical characteristics of earth-abundant solar absorbers Cu2BeSnX4 (X= S, Se, Te)

被引:2
|
作者
Serai H. [1 ,2 ]
Ziane M.I. [3 ]
Bennacer H. [1 ,2 ]
Hadjab M. [1 ]
Denawi A.H. [4 ]
Ouali M.A. [1 ,5 ]
Ladjal M. [1 ,5 ]
Boukortt A. [2 ]
机构
[1] Faculty of Technology, University of M'sila, PO BOX 166 Ichebilia, M'sila
[2] Elaboration and Physico-Mechanical and Metallurgical Characterization of Materials Laboratory, ECP3M, University of Mostaganem
[3] Laboratory of Electrical and Materials Engineering (LGEM), Higher School of Electrical and Energetic Engineering of Oran (ESGEE)
[4] CNRS, LPICM, École Polytechnique, IP Paris, Palaiseau
[5] LASS, Laboratory of Analysis of Signals and Systems, University of M'sila
来源
Optik | 2024年 / 306卷
关键词
Absorption and reflectivity coefficients; FP-LAPW; Kesterite structure semiconductors; Photovoltaic cells;
D O I
10.1016/j.ijleo.2024.171794
中图分类号
学科分类号
摘要
This study aims to examine the equilibrium Kesterite structure of Cu2BeSnS4, Cu2BeSnSe4, and Cu2BeSnTe4 by the application of density functional theory (DFT) and the Full-Potential Linearized Augmented Plane Wave (FP-LAPW) method. The study demonstrates that both Cu2BeSnS4 and Cu2BeSnSe4 compounds are semiconductors with direct band gaps at the Γ point, while Cu2BeSnTe4 has an indirect band gap (Γ→X). The electronic and optical characteristics of these materials indicate their potential utility in optoelectronic, photonic, and photovoltaic applications. Furthermore, a thorough comparison has been conducted between the obtained results and other experimental and theoretical data from the same chalcogenide family. In summary, the findings offer valuable information on the possible photovoltaic uses of these compounds. © 2024 Elsevier GmbH
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