Analysis of SEU Radiation-Hardened Method About DICE-DFF and TMR-DFF Based on 65 nm Bulk CMOS Technology

被引：0
|
作者：
Li H. [1 ]
Yang B. [1 ]
Jiang Y. [1 ]
Gao L. [1 ]
Yang L. [1 ]
机构：
[1] Xi'an Microelectronic Technology Institute, Xi'an
来源：
Dianzi Keji Daxue Xuebao/Journal of the University of Electronic Science and Technology of China | 2022年 / 51卷 / 03期
关键词：
Cross section; DFF; DICE-DFF; SEU; TMR;
D O I：
10.12178/1001-0548.2021245
中图分类号：
学科分类号：
摘要：
Based on 65 nm bulk CMOS technology, six kinds of DFFs including common DFF, DICE-DFF, FDICE-DFF, TMR-DFF, TTMR-DFF300 and TTMR-DFF600 were tested and analyzed by the shift register structure. Ti, Cu, Br, I, Au, Bi were used to impact the DFFs circuit. The results show common DFF has the worst cross section, which is 3.5×10−8 cm2/bit to 1.7×10−7 cm2/bit, while TTMR-DFF600 has the best cross sectionof 5×10-11cm2/bit to 7×10-10cm2/bit, which is only 0.1% of common DFF's cross section. The six DFF structures were analyzed from speed, area, number of transistors and performance of SEU-hardened. Some meaningful suggestions have been provided for the design of SEU-hardened VLSI circuits. Copyright ©2022 Journal of University of Electronic Science and Technology of China. All rights reserved.
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页码：458 / 463
页数：5
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