Radiation-induced damage mechanisms and on-orbit degradation predictions for triple-junction solar cells

被引：0
|
作者：
Peng C. [1 ]
机构：
[1] Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou
来源：
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | 2022年 / 43卷 / 12期
关键词：
Displacement damage; GaAs; Radiation effects; Solar cells; Space applications; TCAD simulations;
D O I：
10.19912/j.0254-0096.tynxb.2021-0733
中图分类号：
学科分类号：
摘要：
Proton/electron irradiation experiments are carried out for triple-junction solar cells. The radiation damage sensitive region in triple-junction solar cell is identified, and the degradation model of electrical characteristics with the displacement damage dose (DDD) is established. Based on TCAD simulations, the degradation mechanisms of triple-junction solar cells after irradiation is studied and verified. Combined with Monte Carlo simulations and ground irradiation tests, the equivalent DDD method is used to predict the on-orbit performances of triple-junction solar cells. The on-orbit degradations of typical Chinese triple-junction solar cells in GEO and LEO orbits are calculated. © 2022, Solar Energy Periodical Office Co., Ltd. All right reserved.
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页码：25 / 31
页数：6
相关论文
共 15 条
  • [1] GONZALEZ M, ANDRE C L, WALTERS R J, Et al., Deep level defects in proton radiated GaAs grown on metamorphic SiGe/Si substrates, Journal of applied physics, 100, 3, pp. 1-7, (2006)
  • [2] KHAN A, IQBAL M Z, QURASHI U S, Et al., Characteristics of alpha-radiation-induced deep level defects in p-type InP grown by metal-organic chemical vapor deposition, Japanese journal of applied physics, 37, 8, pp. 4595-4602, (1998)
  • [3] DHARMARASU N, YAMAGUCHI M, BOURGOIN J C, Et al., Majority-and minority-carrier deep level traps in proton-irradiated InGaP space solar cells, Applied physics letters, 81, 1, pp. 64-66, (2002)
  • [4] SUGIMOTO H, TAJIMA M, HASE S, Et al., Luminescence analysis of radiation effects in multi-junction solar cells for space, Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, pp. 830-833, (2005)
  • [5] ROMERO M J, ARAUJO D, GARCIA R, Et al., Radiation-induced order-disorder transition in p+-n InGaP solar cells, Applied physics letters, 74, 18, pp. 2684-2686, (1999)
  • [6] ZAZOUI M, BOURGOIN J C., Space degradation of multijunction solar cells: An electroluminescence study, Applied physics letters, 80, 23, pp. 4455-4457, (2002)
  • [7] WANG R, LIU Y H, SUN X F., Effects of 0.28-2.80 MeV proton irradiation on GaInP/GaAs/Ge triple-junction solar cells for space use, Nuclear instruments and methods in physics research b, 266, pp. 745-749, (2008)
  • [8] YANG S S, GAO X, WANG Z., Displacement damage characterization of electron radiation in triple-junction GaAs solar cells, Journal of spacecraft and rockets, 48, 1, pp. 23-26, (2011)
  • [9] IMAIZUMI M, TAKAMOTO T, OHSHIMA T, Et al., Radiaton effects on high-efficiency InGaP/InGaAs/Ge triple-junction solar cells developed for terrestrial use, Conference record of the twenty-ninth IEEE Photovoltaic Specialists Conference, pp. 990-993, (2002)
  • [10] GAO X, YANG S S, FENG Z Z, Et al., Study on displacement damage effects of space triple-junction GaAs solar cells, Acta energiae solaris sinica, 41, 2, pp. 290-295, (2020)
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