Photoelectric Characteristics of Non-electric Contact GaN-based Micro-LED Device

被引:0
|
作者
Xu H.-L. [1 ]
Chen K.-J. [1 ]
Chen P.-Q. [1 ]
Zhou X.-T. [1 ,2 ]
Guo T.-L. [1 ,2 ]
Wu C.-X. [1 ,2 ]
Zhang Y.-A. [1 ,2 ]
机构
[1] College of Physics and Information Engineering, Fuzhou University, Fuzhou
[2] Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou
来源
关键词
alternating-current drive; GaN; Micro-LED device; non-electrical contact; photoelectric characteristics;
D O I
10.37188/CJL.20220237
中图分类号
学科分类号
摘要
In this paper, non-electrical contact(NEC) GaN-based Micro-LED devices were prepared by metal organic chemical vapor deposition(MOCVD) and atomic layer deposition(ALD) because a series of problems would emerge, including mass transfer, bonding, and high-quality contact between chips and driving electrodes as the LED chip size is further decreased. We investigated the photoelectric characteristics of NEC Micro-LED devices, such as the current-voltage(I-V), luminance-frequency(L-F), luminescence delay and impedance-frequency(I-F) characteristics, and the working mechanism of the device is also analyzed. These experimental results indicate that the current of the NEC Micro-LED device increases with the increase of the frequency and I-V curves have linear relationships under the role of the alternating-current drive. At the driving signal of 20Vpp, the luminances of the NEC Micro-LED device first increase and then fall with the gradual increases of the frequencies. When the frequency is 25 MHz, the luminance of NEC Micro-LED device reaches to be the maximum. Moreover, the luminescence peak lags behind the current peak, indicating that the luminescence of the device is delayed. Besides, the equivalent impedance of the NEC Micro-LED device decreases and finally tends to be stable with the increases of the frequencies and the device shows the negative capacitance phenomenon around the frequency of 53 MHz. © 2022 Chines Academy of Sciences. All rights reserved.
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页码:1592 / 1600
页数:8
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