Contact States of Workpiece-Abrasive Particles-Polishing Pad in Cemented Carbide CMP Processes

被引:6
|
作者
Mao M. [1 ,3 ]
Xu Q. [1 ]
Liu J. [1 ]
Yuan J. [2 ,3 ,4 ]
Li M. [3 ,4 ]
Hu Z. [1 ]
机构
[1] Engineering Research Center of Complex Tracks Processing Technology and Equipment of Ministry of Education, Xiangtan University, Xiangtan
[2] Key Laboratory of Special Purpose Equipment and Advanced Processing Technology of Ministry of Education, Zhejiang University of Technology, Hangzhou
[3] National Engineering Research Center for High Efficiency Grinding, Hunan University, Changsha
[4] Intelligent Manufacturing Institute, Hunan University of Science and Technology, Xiangtan
关键词
Cemented carbide; Chemical mechanical polishing(CMP); Contact state; Critical condition; Pressed depth;
D O I
10.3969/j.issn.1004-132X.2021.17.008
中图分类号
学科分类号
摘要
Theoretical analysis of the contact states among workpiece, abrasive particles and polishing pads was carried out based on the theory of elastoplastic mechanics, the depth of the abrasive particles pressed into the workpieces under each contact states was calculated, and the mathematical model of the critical conditions of the contact states was established, and the verification experiments were conducted. The research results show that in the cemented carbide CMP processes, there are three forms of non-contact state, partial contact state, and full contact state among workpiece, abrasive particles and polishing pads. The depth of the abrasive particles pressed into the cemented carbide workpieces in the three contact states is mainly affected by the polishing load, the size of the abrasive particles and the hardness of soft layer of workpiece, and the critical conditions of each contact states are determined by the characteristics of the polishing pad, the mass fraction of abrasive particles, and the polishing load. The experimental results show that the established mathematical model is credible. © 2021, China Mechanical Engineering Magazine Office. All right reserved.
引用
收藏
页码:2074 / 2081
页数:7
相关论文
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