Scale Effect Model of Thermal Conductivity for Silicon-on-Insulator Field Effect Transistors

被引：0
|
作者：
Lai J. [1 ,2 ]
Xing Q. [1 ,2 ]
Su Y. [3 ]
Zhang G. [1 ,2 ]
机构：
[1] School of Microelectronics, Xi'an Jiaotong University, Xi'an
[2] The Key Lab of Micro-Nano Electronics and System Integration of Xi'an City, Xi'an
[3] School of Mechanical Engineering, Xi'an Shiyou University, Xi'an
来源：
Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University | 2021年 / 55卷 / 09期
关键词：
Phonon boundary scattering; Scale effect; Silicon-on-insulator; Thermal conductivity;
D O I：
10.7652/xjtuxb202109009
中图分类号：
学科分类号：
摘要：
A scale effect model of thermal conductivity for silicon film in fully depleted silicon-on-insulator (FD SOI) metal-oxide-semiconductor field effect transistor (MOSFET) based on an equivalent phonon boundary scattering free path is proposed to address the problem that thermal conductivity of micro-nano scale silicon film suffers a severe scale effect. Phonon relaxation time influenced by bound state and free state electrons was quantified by studying phonon scattering mechanism in silicon materials. The analytical thermal conductivity model of silicon material was derived. In-depth studies of phonon boundary scattering mechanism were carried out. Equivalent phonon boundary scattering mean free path was obtained by solving the attenuation factor function. Phonon boundary scattering and phonon scattering in silicon material were coupled by the Matthiessen rule. An approximate analytical thermal conductivity model for nanoscale FD SOI MOSFET silicon film was established and verified by the original model of Asheghi and experimental tests. Results show that the equivalent mean free path of phonon boundary scattering in silicon film is about 2.5 times the film thickness. Phonon boundary scattering dominates microscale and nanoscale phonon heat transfer process, determining the ultra-fast heat transfer characteristics of phonons in thin silicon films. The thermal conductivity model based on the equivalent boundary scattering free path approximation is in good agreement with original model and experimental data, highlighting the physical significance of the attenuation factor and effectively revealing the thermal conductivity of the nanodevice in a limited space. © 2021, Editorial Office of Journal of Xi'an Jiaotong University. All right reserved.
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页码：80 / 87
页数：7
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