A 4H-SiC trench MOSFET structure with wrap N-type pillar forlow oxide field and enhanced switching performance

被引：0
|
作者：
沈培 [1 ,2 ]
王颖 [1 ]
曹菲 [1 ]
机构：
[1] The Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University
[2] The School of Mechanical and Electronic Engineering, Pingxiang
来源：
Chinese Physics B | 2022年 / 07期
关键词：
D O I：
暂无
中图分类号：
TN386 [场效应器件];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
Pei Shen(沈培)1,2, Ying Wang(王颖)1,, and Fei Cao(曹菲)1
引用
收藏
页码：724 / 731
页数：9
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