Assessments of the key plasma parameters with different scenarios on HIT-PSI using EMC3-EIRENE

被引:0
|
作者
Wen, Z. X. [1 ]
Niu, G. J. [2 ]
Kawamura, G. [3 ,4 ]
Huang, T. [5 ]
Frerichs, H. [6 ]
Dai, S. Y. [1 ]
机构
[1] Dalian Univ Technol, Sch Phys, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China
[2] Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Peoples R China
[3] Natl Inst Nat Sci, Natl Inst Fus Sci, Toki 5095292, Japan
[4] Natl Inst Quantum Sci & Technol, Rokkasho, Aomori 0393212, Japan
[5] Harbin Inst Technol, Sch Phys, Harbin 150001, Peoples R China
[6] Univ Wisconsin, Dept Engn Phys, Madison, WI USA
基金
中国国家自然科学基金;
关键词
linear device; EMC3-EIRENE; 3D modelling;
D O I
10.1088/1402-4896/ad6b5d
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Linear plasma devices offer an effective way to conduct plasma-wall interaction studies and contribute to a basic understanding of edge plasma physics. A new platform at Harbin Institute of Technology for Plasma Surface Interaction experiments (HIT-PSI) is a newly-built linear device at the stage of commissioning that is capable of simulating high heat power deposition on divertor targets similar to tokamak conditions. Therefore, numerical simulations to evaluate the plasma characteristics are essential for designing and guiding the experimental conditions in HIT-PSI. In this work, the three-dimensional edge transport code EMC3-EIRENE has been used to investigate the plasma parameter distributions in HIT-PSI with the puffing and pumping systems involved. The effects of the heating power and target position on the distribution of electron density, electron temperature, and particle and heat fluxes have been investigated by EMC3-EIRENE. Particularly, the reduction in the electron density with the puffing fluxes has also been studied by analyzing individual atomic and molecular processes. Finally, the influence of varying pumping speeds on plasma parameters has been investigated in detail by adjusting the recycling coefficients at the two pumping ports.
引用
收藏
页数:15
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