Microscopic correlation of doping distribution and luminescence in a nitride laser junction by Photonic Atom Probe

被引:0
|
作者
Weikum, Eric [1 ]
Diaz-Damian, Abraham [1 ,3 ]
Houard, Jonathan [1 ]
Da Costa, Gerald
Delaroche, Fabien [1 ]
Vella, Angela [1 ]
Muziol, Grzegorz [2 ,3 ]
Turski, Henryk [2 ]
Rigutti, Lorenzo [1 ]
机构
[1] Univ Rouen Normandie, Grp Phys Mat, CNRS, F-76000 Rouen, France
[2] Polish Acad Sci Unipress, Inst High Pressure Phys, PL-01142 Warsaw, Poland
[3] Univ Versailles St Quentin, LATMOS, F-78280 Guyancourt 11, France
来源
PHYSICAL REVIEW MATERIALS | 2024年 / 8卷 / 07期
关键词
MG-DOPED GAN; PHOTOLUMINESCENCE BANDS; POLARIZATION; TOMOGRAPHY; EPITAXY; GROWTH; INN; ALN; SI;
D O I
10.1103/PhysRevMaterials.8.074603
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Photonic Atom Probe is applied to the study of nanoscale field-emission tip specimens containing a section of III-N device constituted by a sequence of alloyed and doped sections. Different sections produce specific but spectrally overlapping luminescence signals. The possibility of collecting photoluminescence spectra during the field evaporation of the specimen allows for disentangling different doping-related luminescence lines and to correlate the different spectral contributions to the specific properties of the doping distributions. In particular, the spectral components of the luminescence related to Mg impurities at energies between 3.0 eV and 3.3 eV have been investigated, and correlated with the Mg concentration and 3D distribution in different sections of the device.
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页数:9
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