Influence of dislocations in multilayer graphene stacks: A phase field crystal study

被引:0
|
作者
Elder, K. R. [1 ]
Huang, Zhi-Feng [2 ]
Ala-Nissila, T. [3 ,4 ]
机构
[1] Oakland Univ, Dept Phys, Rochester, MI 48309 USA
[2] Wayne State Univ, Dept Phys & Astron, Detroit, MI 48201 USA
[3] Aalto Univ, QTF Ctr Excellence, Dept Appl Phys, POB 15600, FI-00076 Espoo, Finland
[4] Loughborough Univ, Interdisciplinary Ctr Math Modelling, Dept Math Sci, Loughborough LE11 3TU, Leicestershire, England
来源
PHYSICAL REVIEW MATERIALS | 2024年 / 8卷 / 10期
基金
美国国家科学基金会; 芬兰科学院;
关键词
D O I
10.1103/PhysRevMaterials.8.104003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, the influence of 5|7 dislocations in multilayer graphene stacks (up to six layers) is examined. The study is conducted using a recently developed phase-field crystal (PFC) model for multilayer systems incorporating out-of-plane deformations and parameterized to match to density functional theory calculations for graphene bilayers and other systems. The specific configuration considered consists of one monolayer containing four 5|7 dislocations (i.e., two dislocation dipoles) sandwiched between perfect graphene layers. This study reveals how the strain field from the dislocations in the defected layer leads to out-of-plane deformations, which in turn cause deformations of neighboring layers. Quantitative predictions are made for the defect-free energy of the multilayer stacks as compared to a defect-free system, which is shown to increase with the number of layers and system size. Furthermore, it is predicted that system defect energy saturates by roughly ten sheets in the stack, indicating the range of defect influence across the multilayer. Variations in stress field distribution and layer height profiles in different layers of the stack are also quantitatively identified.
引用
收藏
页数:11
相关论文
共 50 条
  • [1] Melting at dislocations and grain boundaries: A phase field crystal study
    Berry, Joel
    Elder, K. R.
    Grant, Martin
    PHYSICAL REVIEW B, 2008, 77 (22):
  • [2] Crystal Field Effect and Electric Field Screening in Multilayer Graphene with and without Twist
    Tepliakov, Nikita, V
    Wu, QuanSheng
    Yazyev, Oleg, V
    NANO LETTERS, 2021, 21 (11) : 4636 - 4642
  • [3] Thickness Dependent Interlayer Magnetoresistance in Multilayer Graphene Stacks
    Bodepudi, S. C.
    Wang, X.
    Singh, A. P.
    Pramanik, S.
    JOURNAL OF NANOMATERIALS, 2016, 2016
  • [4] Angle dependent interlayer magnetoresistance in multilayer graphene stacks
    Bodepudi, S. C.
    Wang, Xiao
    Pramanik, S.
    JOURNAL OF APPLIED PHYSICS, 2015, 118 (16)
  • [5] MEASURING PHASE DISPERSION OF DIELECTRIC MULTILAYER STACKS
    SCHWIDER, J
    APPLIED OPTICS, 1992, 31 (28) : 6107 - 6110
  • [6] A nanoscale study of nucleation and propagation of Zener types cracks at dislocations: Phase field crystal model
    Liu, Zhe-Yuan
    Gao, Ying-Jun
    Deng, Qian-Qian
    Li, Yi-Xuan
    Huang, Zong-Ji
    Liao, Kun
    Luo, Zhi-Rong
    COMPUTATIONAL MATERIALS SCIENCE, 2020, 179
  • [7] Direct Identification of Multilayer Graphene Stacks on Copper by Optical Microscopy
    Cheng, Yu
    Song, Yenan
    Zhao, Dongchen
    Zhang, Xuewei
    Yin, Shaoqian
    Wang, Peng
    Wang, Miao
    Xia, Yang
    Maruyama, Shigeo
    Zhao, Pei
    Wang, Hongtao
    CHEMISTRY OF MATERIALS, 2016, 28 (07) : 2165 - 2171
  • [8] THE INFLUENCE OF DISLOCATIONS ON CRYSTAL GROWTH
    FRANK, FC
    DISCUSSIONS OF THE FARADAY SOCIETY, 1949, (05): : 48 - 54
  • [9] Two-Mode Phase Field Crystal Study of Evolution of Grain Boundaries and Dislocations in Hexagonal to Square Phase Transformation
    Wu, Lu
    Pan, Rongjian
    Zhang, Wei
    Chen, Zheng
    Wang, Heran
    Zhang, Jing
    Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering, 2020, 49 (12): : 4103 - 4111
  • [10] Two-Mode Phase Field Crystal Study of Evolution of Grain Boundaries and Dislocations in Hexagonal to Square Phase Transformation
    Wu Lu
    Pan Rongjian
    Zhang Wei
    Chen Zheng
    Wang Heran
    Zhang Jing
    RARE METAL MATERIALS AND ENGINEERING, 2020, 49 (12) : 4103 - 4111