Exceptional thermoelectric and mechanical performance in (Bi, Sb)2Te3 matrix facilitated by AgInSe2 alloying

被引:2
|
作者
Li, Ruiheng [1 ]
Ou, Wenxin [1 ]
Zhu, Jianglong [1 ]
Deng, Qian [1 ]
Tan, Xiaobo [1 ]
Zhao, Qi [2 ]
Lu, Tianbo [2 ]
Gao, Shaojingya [3 ,4 ,5 ,6 ]
Ma, Huangshui [3 ,4 ,5 ]
Wu, Hao [7 ]
Sun, Qiang [3 ,6 ]
Ang, Ran [1 ,8 ]
机构
[1] Sichuan Univ, Inst Nucl Sci & Technol, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[3] Sichuan Univ, State Key Lab Oral Dis, Chengdu 610041, Peoples R China
[4] Sichuan Univ, Natl Cte Stomatol, Chengdu 610041, Peoples R China
[5] Sichuan Univ, West China Hosp Stomatol, Natl Clin Res Ctr Oral Dis, Chengdu 610041, Peoples R China
[6] Sichuan Prov Engn Res Ctr Oral Biomat, Chengdu 610041, Peoples R China
[7] Chinese Peoples Liberat Army Gen Hosp, Med Ctr 8, Dept Stomatol, Beijing 100853, Peoples R China
[8] Sichuan Univ, Inst New Energy & Low Carbon Technol, Chengdu 610065, Peoples R China
关键词
Bismuth telluride; Thermoelectric device; Application prospects; AgInSe2; BISMUTH-TELLURIDE; THERMAL-CONDUCTIVITY; POWER; GENERATION;
D O I
10.1016/j.cej.2024.154624
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
The emerging fields of the Internet of Things, intelligent robotics, and smart biomedical devices have sparked an increasing demand for high-performance thermoelectric (TE) devices due to their efficient conversion of thermal energy into electrical power, and vice versa. The environmentally friendly (Bi, Sb)2Te3 2 Te 3 (BST) system, which displays superior performance near room temperature, offers a promising solution for optimizing thermoelectrics to meet the needs of commercial applications. Here, we utilized AgInSe2 2 alloying to enhance the TE and mechanical properties of BST, aiming to optimize electron and phonon transport and elucidate the underlying mechanisms. The synergistic optimization resulted in a peak zT of 1.3 at 353 K and an average zT ave of 1.11 from 303 K to 503 K in BST-0.1 %AgInSe2, 2 , as well as a high Vickers hardness of 105 H v. Through rational optimization of the TE device, we achieved a maximum conversion efficiency of 6 % at a temperature difference of 210 K. Leveraging the robust TE output of the device, we further evaluated its potential as a self- powered information interaction wristband device based on ASCII codes. We envisage this versatile TE device being extensively applied in power generation and human-machine interaction, with promising potential in wearable electronics, telecommunications, and healthcare monitoring.
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页数:9
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