Influence of germanium concentration on the microstructure and optical transparency of terbium gallium garnet ceramics

被引:0
|
作者
Li, Xiao [1 ,2 ,3 ]
Zhang, Lixuan [1 ,4 ]
Zhu, Danyang [1 ,4 ]
Wu, Junlin [1 ,4 ]
Hu, Chen [1 ,4 ]
Li, Tingsong [1 ]
Wu, Lexiang [1 ]
Hreniak, Dariusz [5 ]
Li, Jiang [1 ,4 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, Transparent Ceram Res Ctr, Shanghai, Peoples R China
[2] Chinese Acad Sci, Ganjiang Innovat Acad, Ganzhou, Peoples R China
[3] Univ Sci & Technol China, Sch Rare Earths, Hefei, Peoples R China
[4] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R China
[5] Polish Acad Sci, Inst Low Temp & Struct Res, Wroclaw, Poland
关键词
germanium ethoxide; magneto-optical material; sintering aids; TGG transparent ceramics; MAGNETOOPTICAL PROPERTIES; FABRICATION; TB3GA5O12; PERFORMANCE; CRYSTALS; GROWTH;
D O I
10.1111/jace.20140
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In recent years, transparent terbium gallium garnet (TGG) ceramics have garnered significant interest for their application in high-power Faraday isolators. However, challenges in achieving high transparency have led researchers to explore the addition of various sintering aids as a key strategy to enhance the optical quality of TGG ceramics. Through this work, the effect of germanium (Ge) addition on the microstructure and optical transparency of TGG magneto-optical ceramics was investigated. TGG powders were synthesized by the co-precipitation method, and the source Ge was Ge ethoxide added through a ball-milling step. Transparent TGG ceramics were prepared by air pre-sintering combined with hot isostatic pressing post-treatment and subsequent annealing. The ceramics containing 200 ppm Ge exhibit optimal transmittance of 81.3% at 1064 nm (a value of theoretical transmittance), the Verdet constant was -133.0 rad<middle dot>T-1<middle dot>m(-1) at 633 nm. When the addition of Ge reaches 600 ppm, a secondary phase can be observed on the surface of ceramic. Subsequently, TGG ceramics prepared from 1425 degrees C to 1500 degrees C with 200 ppm of Ge were analyzed, which revealed that the optimal pre-sintering temperature is 1450 degrees C.
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页数:11
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