Observations of two-dimensional electron gases in AlGaN/GaN high-electron-mobility transistors using up-converted photoluminescence excitation

被引：1

作者：

Chen, Yu-Ting ^{[1
,2
]}

Chen, Lu-Hsun ^{[1
,2
]}

Wu, Chii-Bin ^{[1
,2
]}

Chang, Sheng Hsiung ^{[1
,2
]}

Yuan, Chi-Tsu ^{[1
,2
]}

Wen, Wen-Yu ^{[1
,2
]}

Chiu, Ching-Hsueh ^{[3
]}

Hsu, Hertz ^{[4
]}

Hsueh, Wei Jen ^{[4
]}

Lee, Yueh-Jian ^{[5
]}

Shen, Ji-Lin ^{[1
,2
]}

机构：

[1] ChungYuan Christian Univ, Dept Phys, Chungli 32023, Taiwan

[2] ChungYuan Christian Univ, Res Ctr Semicond Mat & Adv Opt, Chungli 32023, Taiwan

[3] Chung Yuan Christian Univ, Dept Elect Engn, Chungli 32023, Taiwan

[4] Wafer Works Corp, Taoyuan 32542, Taiwan

[5] Lunghwa Univ Sci & Technol, Dept Elect Engn, Guishan 333326, Taoyuan County, Taiwan

来源：

OPTICS EXPRESS | 2024年 / 32卷 / 18期

关键词：

CONVERSION; SEMICONDUCTOR; LIGHT;

D O I：

10.1364/OE.533392

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Up-converted photoluminescence excitation (UPLE) spectra of AlGaN/GaN high- electron-mobility transistors (HEMTs) grown on Si substrates have been investigated. Based on the temperature dependence of UPLE, the 3.335-eV excitation peak is attributed to the twodimensional electron gases (2DEGs) in the AlGaN/GaN heterostructure. A two-step two-photon absorption process through real intermediate quantum-well states is suggested to be responsible for the up-converted luminescence in the AlGaN/GaN HEMTs

引用

页数：8

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