Fusion Neutron-Induced Soft Errors During Long Pulse D-D Plasma Discharges in the WEST Tokamak

被引:0
|
作者
Moindjie, S. [1 ]
Munteanu, D. [1 ]
Autran, J. L. [1 ,2 ]
Dentan, M. [3 ]
Moreau, P. [3 ]
Pellissier, F. P. [3 ]
Santraine, B. [3 ]
Bucalossi, J. [3 ]
Malherbe, V. [4 ]
Thery, T.
Gasiot, G.
Roche, P.
Cecchetto, M. [5 ]
Alia, R. Garcia [5 ]
机构
[1] Aix Marseille Univ, CNRS, IM2NP, UMR 7334, F-13397 Marseille, France
[2] Univ Rennes, CNRS, UMR 6251, IPR, F-35042 Rennes, France
[3] CEA Ctr Cadarache, IRFM, F-13115 St Paul Les Durance, France
[4] STMicroelectronics, F-38926 Crolles, France
[5] CERN, CH-1211 Geneva 23, Switzerland
关键词
Complementary metal-oxide-semiconductor (CMOS); deuterium-deuterium (D-D); deuterium-tritium (D-T); fusion; International Thermonuclear Experimental Reactor (ITER); neutron; real-time experiment; single-event effects (SEEs); single-event upset (SEU); soft-error rate (SER); static random access memory (SRAM); tokamak; W-tungsten-Environment in Steady-state Tokamak (WEST); 65; NM; SIMULATIONS; BULK;
D O I
10.1109/TNS.2023.3347673
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have performed real-time soft error rate (RT-SER) measurements on bulk 65-nm static random access memories (SRAMs) during deuterium-deuterium (D-D) plasma operation at W-tungsten-Environment in Steady-state Tokamak (WEST). The present measurement campaign was characterized by the production of several tens of long pulse discharges (similar to 60 s) and by a total neutron fluence (at the level of the circuits under test) up to similar to 10(9) n center dot cm(-2), improving the error statistics by a factor of more than 6 with respect to the first measurements obtained in 2020. The experimental results demonstrate the occurrence of bursts of single-event upsets (SEUs) during the most efficient shots and 12% of multiple cell upset (MCU) events. Time-resolved data also show that MCUs are preferentially detected in the last part of these long pulses, providing further evidence that higher energy neutrons, initiated by deuterium-tritium (D-T) reactions due to triton burn-up in the D-D plasma, may play a role in the production of MCUs that cannot be attributed in such large proportions to "low-energy" neutrons produced in D-D reactions.
引用
收藏
页码:1496 / 1502
页数:7
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