Wafer-scale Te thin film with high hole mobility and piezoelectric coefficients

p-type semiconductors are significant for integrated nanoelectronics. Tellurium (Te), a mono-elemental material, is a p-type semiconductor with high mobility. Its outstanding performance renders it widely applicable in the fields of electronics and optoelectronics. However, the wafer-scale fabrication of Te thin films is challenging. In this study, we reported an ion-bean sputtered Te thin film and investigated the effects of annealing temperatures. Annealing-induced crystallization kinetics were assessed through Raman spectroscopy, x-ray diffraction, and atomic force microscopy. After annealing, the film's conductivity increased from 10-5 to 10-4 S and mobility from 18 to 53 cm2 V-1 s(-1). Dual AC resonance tracking switching spectroscopy piezoelectric force microscopy is used to investigate piezo/ferroelectric properties. The coercive voltages are -2 and 4 V respectively, and the effective piezoelectric coefficient (d(33)) is 40 pm/V. Butterfly and phase-switching loops demonstrate its possible ferroelectricity. The Te thin film has potential applications in optoelectronics, nonvolatile memory devices, and neuromorphic computation.