SHORT-PERIOD SUPERLATTICES;
QUANTUM-WELLS;
DIGITAL ALLOY;
ALGAN;
NM;
ISLANDS;
D O I:
10.1063/5.0223215
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Recently, deep-ultraviolet (DUV) light-emitting devices have attracted attention for various applications. GaN/AlN superlattices have emerged as a promising alternative for achieving high-efficiency DUV emission. To fabricate superlattices with high crystal quality and abrupt interfaces, we have utilized face-to-face-annealed sputter-deposited AlN template substrates characterized by a flat surface and low dislocation density. Furthermore, radio-frequency plasma-assisted molecular beam epitaxy with in situ reflection high-energy electron diffraction monitoring was employed for the growth process. The growth of the superlattices follows a specific sequence. Step 1: AlN growth, Step 2: conversion of Al droplets to AlN, Step 3: GaN growth, and Step 4: evaporation of Ga droplets. This study explored the impact of GaN thickness on the GaN/AlN superlattice. The GaN thickness was linearly controlled by changing the duration of Step 3. This approach allowed for the growth of a flat GaN layer up to 1 monolayer (ML) and achieved superlattices with abrupt interfaces. Single-peak cathodoluminescence (CL) emission at 240-245 nm was observed from the superlattices, with the peak shift toward longer wavelengths as the GaN thickness increased. In contrast, quantum dot-like GaN islands were generated with a thickness of over 1 ML, induced by compressive strain. Superlattices with thicker GaN exhibited broad CL emission with multiple peaks. However, the AlN barrier layer reduced the surface roughness and maintained abrupt interfaces within the superlattices. Therefore, to obtain sharp single-peak UV emission from GaN/AlN superlattices, the growth sequence should be controlled to obtain flat GaN layers without dots. (C) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International (CC BY-NC-ND) license (https://creativecommons.org/licenses/by-nc-nd/4.0/).
机构:
Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
Zhao, Lu
Zhang, Shuo
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Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
Zhang, Shuo
Zhang, Yun
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机构:
Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
Zhang, Yun
Yan, Jianchang
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机构:
Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
Yan, Jianchang
Zhang, Lian
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Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
Zhang, Lian
Ai, Yujie
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Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
Ai, Yujie
Guo, Yanan
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Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
Guo, Yanan
Ni, Ruxue
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Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
Ni, Ruxue
Wang, Junxi
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Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
Wang, Junxi
Li, Jinmin
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Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Inst Semicond, Res & Dev Ctr Solid State Lighting, Beijing 100083, Peoples R China
机构:
Yamaguchi Univ, Grad Sch Sci & Technol Innovat, Ube, Yamaguchi 7558611, JapanYamaguchi Univ, Grad Sch Sci & Technol Innovat, Ube, Yamaguchi 7558611, Japan
Fujii, Megumi
Ohnishi, Yuta
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Yamaguchi Univ, Grad Sch Sci & Technol Innovat, Ube, Yamaguchi 7558611, JapanYamaguchi Univ, Grad Sch Sci & Technol Innovat, Ube, Yamaguchi 7558611, Japan
Ohnishi, Yuta
Oshimura, Ryota
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Yamaguchi Univ, Grad Sch Sci & Technol Innovat, Ube, Yamaguchi 7558611, JapanYamaguchi Univ, Grad Sch Sci & Technol Innovat, Ube, Yamaguchi 7558611, Japan
Oshimura, Ryota
Inai, Kosuke
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Yamaguchi Univ, Grad Sch Sci & Technol Innovat, Ube, Yamaguchi 7558611, JapanYamaguchi Univ, Grad Sch Sci & Technol Innovat, Ube, Yamaguchi 7558611, Japan
Inai, Kosuke
Himeno, Kunio
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Yamaguchi Univ, Grad Sch Sci & Technol Innovat, Ube, Yamaguchi 7558611, JapanYamaguchi Univ, Grad Sch Sci & Technol Innovat, Ube, Yamaguchi 7558611, Japan
Himeno, Kunio
Okada, Narihito
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Yamaguchi Univ, Grad Sch Sci & Technol Innovat, Ube, Yamaguchi 7558611, JapanYamaguchi Univ, Grad Sch Sci & Technol Innovat, Ube, Yamaguchi 7558611, Japan
Okada, Narihito
Uesugi, Kenjiro
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机构:
Mie Univ, Mie Reg Plan Co Creat Org, Tsu, Mie 5148507, Japan
Mie Univ, Grad Sch Reg Innovat Studies, Tsu, Mie 5148507, JapanYamaguchi Univ, Grad Sch Sci & Technol Innovat, Ube, Yamaguchi 7558611, Japan
Uesugi, Kenjiro
Miyake, Hideto
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机构:
Mie Univ, Grad Sch Reg Innovat Studies, Tsu, Mie 5148507, Japan
Mie Univ, Grad Sch Engn, Tsu, Mie 5148507, JapanYamaguchi Univ, Grad Sch Sci & Technol Innovat, Ube, Yamaguchi 7558611, Japan
Miyake, Hideto
Yamada, Yoichi
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h-index: 0
机构:
Yamaguchi Univ, Grad Sch Sci & Technol Innovat, Ube, Yamaguchi 7558611, JapanYamaguchi Univ, Grad Sch Sci & Technol Innovat, Ube, Yamaguchi 7558611, Japan