GaN thickness dependence of GaN/AlN superlattices on face-to-face-annealed sputter-deposited AlN templates

被引:0
|
作者
Deura, Momoko [1 ]
Mokutani, Naoya [2 ]
Wada, Yuichi [2 ]
Miyake, Hideto [3 ]
Araki, Tsutomu [2 ]
机构
[1] Ritsumeikan Univ, Ritsumeikan Global Innovat Res Org, Kusatsu, Shiga 5258577, Japan
[2] Ritsumeikan Univ, Coll Sci & Engn, Dept Elect & Elect Engn, Kusatsu, Shiga 5258577, Japan
[3] Mie Univ, Grad Sch Engn, Tsu, Mie 5148507, Japan
基金
日本学术振兴会;
关键词
SHORT-PERIOD SUPERLATTICES; QUANTUM-WELLS; DIGITAL ALLOY; ALGAN; NM; ISLANDS;
D O I
10.1063/5.0223215
中图分类号
O59 [应用物理学];
学科分类号
摘要
Recently, deep-ultraviolet (DUV) light-emitting devices have attracted attention for various applications. GaN/AlN superlattices have emerged as a promising alternative for achieving high-efficiency DUV emission. To fabricate superlattices with high crystal quality and abrupt interfaces, we have utilized face-to-face-annealed sputter-deposited AlN template substrates characterized by a flat surface and low dislocation density. Furthermore, radio-frequency plasma-assisted molecular beam epitaxy with in situ reflection high-energy electron diffraction monitoring was employed for the growth process. The growth of the superlattices follows a specific sequence. Step 1: AlN growth, Step 2: conversion of Al droplets to AlN, Step 3: GaN growth, and Step 4: evaporation of Ga droplets. This study explored the impact of GaN thickness on the GaN/AlN superlattice. The GaN thickness was linearly controlled by changing the duration of Step 3. This approach allowed for the growth of a flat GaN layer up to 1 monolayer (ML) and achieved superlattices with abrupt interfaces. Single-peak cathodoluminescence (CL) emission at 240-245 nm was observed from the superlattices, with the peak shift toward longer wavelengths as the GaN thickness increased. In contrast, quantum dot-like GaN islands were generated with a thickness of over 1 ML, induced by compressive strain. Superlattices with thicker GaN exhibited broad CL emission with multiple peaks. However, the AlN barrier layer reduced the surface roughness and maintained abrupt interfaces within the superlattices. Therefore, to obtain sharp single-peak UV emission from GaN/AlN superlattices, the growth sequence should be controlled to obtain flat GaN layers without dots. (C) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International (CC BY-NC-ND) license (https://creativecommons.org/licenses/by-nc-nd/4.0/).
引用
收藏
页数:8
相关论文
共 43 条
  • [1] Control of Metal-Rich Growth for GaN/AlN Superlattice Fabrication on Face-to-Face-Annealed Sputter-Deposited AlN Templates
    Mokutani, Naoya
    Deura, Momoko
    Mouri, Shinichiro
    Shojiki, Kanako
    Xiao, Shiyu
    Miyake, Hideto
    Araki, Tsutomu
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2023, 260 (09):
  • [2] Extremely high internal quantum efficiency of AlGaN-based quantum wells on face-to-face annealed sputter-deposited AlN templates
    Murotani, Hideaki
    Fujii, Atsushi
    Oshimura, Ryota
    Kusaba, Takafumi
    Uesugi, Kenjiro
    Miyake, Hideto
    Yamada, Yoichi
    APPLIED PHYSICS EXPRESS, 2021, 14 (12)
  • [3] Polarity control of sputter-deposited AlN with high-temperature face-to-face annealing
    Shojiki, Kanako
    Uesugi, Kenjiro
    Xiao, Shiyu
    Miyake, Hideto
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 166
  • [4] 230 nm electron-beam excited light source with AlGaN/AlN multiple quantum wells on face-to-face annealed sputter-deposited AlN template
    Iwase, Ryoya
    Akaike, Ryota
    Yasunaga, Hiroki
    Nakamura, Takao
    Nagao, Masayoshi
    Murakami, Katsuhisa
    Miyake, Hideto
    JOURNAL OF CRYSTAL GROWTH, 2025, 660
  • [5] AlGaN-based ultraviolet light-emitting diodes on sputter-deposited AlN templates with epitaxial AlN/AlGaN superlattices
    Zhao, Lu
    Zhang, Shuo
    Zhang, Yun
    Yan, Jianchang
    Zhang, Lian
    Ai, Yujie
    Guo, Yanan
    Ni, Ruxue
    Wang, Junxi
    Li, Jinmin
    SUPERLATTICES AND MICROSTRUCTURES, 2018, 113 : 713 - 719
  • [6] Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template
    Uesugi, Kenjiro
    Shojiki, Kanako
    Tezen, Yuta
    Hayashi, Yusuke
    Miyake, Hideto
    APPLIED PHYSICS LETTERS, 2020, 116 (06)
  • [7] Preparation of AlN film grown on sputter-deposited and annealed AlN buffer layer via HVPE
    Li, Di-Di
    Chen, Jing-Jing
    Su, Xu-Jun
    Huang, Jun
    Niu, Mu-Tong
    Xu, Jin-Tong
    Xu, Ke
    CHINESE PHYSICS B, 2021, 30 (03)
  • [8] Preparation of AlN film grown on sputter-deposited and annealed AlN buffer layer via HVPE
    李迪迪
    陈晶晶
    苏旭军
    黄俊
    牛牧童
    许金通
    徐科
    Chinese Physics B, 2021, (03) : 495 - 500
  • [9] Optical characterization of point defects on internal quantum efficiency in AlGaN quantum wells grown on face-to-face-annealed sputtered AlN templates
    Kurai, Satoshi
    Fujii, Megumi
    Ohnishi, Yuta
    Oshimura, Ryota
    Inai, Kosuke
    Himeno, Kunio
    Okada, Narihito
    Uesugi, Kenjiro
    Miyake, Hideto
    Yamada, Yoichi
    AIP ADVANCES, 2023, 13 (04)
  • [10] Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film
    Tanaka, Shuichi
    Shojiki, Kanako
    Uesugi, Kenjiro
    Hayashi, Yusuke
    Miyake, Hideto
    JOURNAL OF CRYSTAL GROWTH, 2019, 512 : 16 - 19