Ultrafast Optical Control of Exciton Diffusion in WSe2/Graphene Heterostructures Revealed by Heterodyne Transient Grating Spectroscopy

被引:2
|
作者
Rieland, Lukas [1 ]
Wagner, Julian [1 ]
Bernhardt, Robin [1 ]
Wang, Tianyi [1 ]
Abdul-Aziz, Omar [1 ]
Stein, Philipp [1 ]
Pogna, Eva A. A. [2 ]
Dal Conte, Stefano [3 ]
Cerullo, Giulio [2 ,3 ]
Hedayat, Hamoon [1 ]
van Loosdrecht, Paul H. M. [1 ]
机构
[1] Univ Cologne, Phys Inst 2, D-50937 Cologne, Germany
[2] CNR, Ist Foton & Nanotecnol, I-20133 Milan, Italy
[3] Politecn Milan, Dipartimento Fis, I-20133 Milan, Italy
关键词
diffusion; transition metal dichalcogenides; graphene; heterodyne transient grating spectroscopy; charge transfer; 2D heterostructures; CARRIER-DIFFUSION; LAYER MOS2; DYNAMICS;
D O I
10.1021/acs.nanolett.4c01516
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Using heterodyne transient grating spectroscopy, we observe a significant enhancement of exciton diffusion in a monolayer WSe2 stacked on graphene. The diffusion dynamics can be optically tuned within a few picoseconds by altering the photoexcited carrier density in graphene. The effective diffusion constant in initial picoseconds in the WSe2/graphene heterostructure is (40.3 +/- 4.5) cm(2) s(-1), representing a substantial improvement over (2.1 +/- 0.8) cm(2) s(-1), typical for an isolated WSe2 monolayer. This enhancement can be understood in terms of a transient screening of impurities, charge traps, and defect states in WSe2 by photoexcited charge carriers in graphene. Furthermore, diffusion within WSe2 is affected by interlayer interactions, such as charge transfer, varying with the incident excitation fluence. These findings underscore the dynamical nature of screening and diffusion processes in heterostructures of 2D semiconductors and graphene and provide insights for future applications of these systems in ultrafast optoelectronic devices.
引用
收藏
页码:9824 / 9831
页数:8
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