Mode Extension of Load-Modulated Balanced Amplifier with Enhanced Efficiency

被引：0
|
作者：
Xie, Jieen [1 ]
Cheng, Kwok-Keung Michael [1 ]
Yu, Pengyu [1 ]
Fang, Xiaohu [2 ]
机构：
[1] Chinese Univ Hong Kong, Hong Kong, Peoples R China
[2] Southern Univ Sci & Technol, Shenzhen, Peoples R China
来源：
2024 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, IMS 2024 | 2024年
关键词：
power amplifier; gallium nitride (GaN); load modulation; asymmetric; high efficiency; wideband; POWER-AMPLIFIER; DOHERTY; DESIGN; BANDWIDTH;
D O I：
10.1109/IMS40175.2024.10600363
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a mode-extended non-Z0 pseudoDoherty load modulated balanced amplifier (N-PD-LMBA) by utilizing a non-Z0 termination is presented for enhanced load modulation of the balanced amplifier (BA) and efficiency profile. The proposed N-PD-LMBA can adaptively switch to hybrid asymmetric LMBA (HA-LMBA) mode at medium-power level for increased efficiency and to PD-LMBA mode at saturation for enhanced power. For illustration, the proposed LMBA, with a 12 dB OBO range and 40% bandwidth (1.6 - 2.4 GHz), was designed and implemented using GaN transistors. Measurement results show that the prototype exhibits a drain efficiency (DE) of 58.270% at saturation, 46.6-59% at 6dB-OBO and 48-63% at 12dBOBO, with an output power of 42.8- 44.1 dBm.
引用
收藏
页码：584 / 587
页数：4
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