High Volatile Antimony(III) Precursors for Metal Oxide Thin Film Deposition

被引:0
|
作者
Jeong, Ji-Seoung [1 ,2 ]
Shin, Sunyoung [1 ]
Park, Bo Keun [1 ,3 ]
Son, Seung Uk [2 ]
Chung, Taek-Mo [1 ,3 ]
Ryu, Ji Yeon [1 ]
机构
[1] Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, Daejeon 34114, South Korea
[2] Sungkyunkwan Univ SKKU, Dept Chem, Suwon 16419, Gyeonggi Do, South Korea
[3] Univ Sci & Technol UST, KRICT Sch, Adv Mat & Chem Engn, Daejeon 34114, South Korea
来源
ACS OMEGA | 2024年 / 9卷 / 29期
基金
新加坡国家研究基金会;
关键词
CHEMICAL-VAPOR-DEPOSITION; OPTICAL-PROPERTIES; COMPLEXES; CRYSTAL;
D O I
10.1021/acsomega.4c03482
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report the synthesis and characterization of novel antimony(III) complexes: Sb(mpa)(3) (1), Sb(mmpa)(3) (2), Sb(mdpa)(3) (3), Sb(epa)(3) (4), Sb(empa)(3) (5), and Sb(edpa)(3) (6) (mpa = N-methoxypropanamide, mmpa = N-methoxy-2-methyl-propanamide, mdpa = N-methoxy-2,2-dimethylpropanamide, epa = N-ethoxypropanamide, empa = N-ethoxy-2-methylpropanamide, and edpa = N-ethoxy-2,2-dimethylpropanamide, via a salt-elimination reaction with SbCl3 and sodium-substituted carboxamide. The molecular structure of 6 revealed the formation of a homoleptic conformer with a highly distorted pentagonal bipyramidal geometry, as determined by X-ray crystallography. Thermogravimetric analysis showed excellent volatility at elevated temperatures, with complex 4 displaying the lowest residual mass of 0.16% at 500 degrees C. For complexes 4, 5, and 6, the temperature at a vapor pressure of 1 Torr and the enthalpy of vaporization were estimated to be 58, 64, and 45 degrees C and 83.31, 103.58, and 99.93 kJ/mol, respectively.
引用
收藏
页码:31871 / 31877
页数:7
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