Deep insight of inter-channel coupling in AlGaN/GaN double channel HEMT and its application in C-ERB2 sensing

被引:0
|
作者
Kanrar, Sharmistha Shee [1 ]
Sarkar, Subir Kumar [2 ]
机构
[1] Jadavpur Univ, Dept Elect & Telecommun Engn, Kolkata 700032, India
[2] IIEST, Dept Elect & Telecommun Engn, Howrah 711103, W Bengal, India
关键词
double channel HEMT (DC HEMT) biosensor; quantization; quantum well; 2DEG; C-ERB2; sensor; sensitivity; SENSITIVITY-ANALYSIS; POLARIZATION;
D O I
10.1088/1402-4896/ad6047
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
AlGaN/GaN Double Channel High Electron Mobility Transistors (DCHEMTs) have emerged as promising biosensors, leveraging the unique properties of inter-channel coupling. This paper investigates the influence of mole fraction variations in the AlGaN layer on inter-channel coupling and explores its implications for C-ERB2 biosensing. The study reveals the potential of inter-channel coupling to enhance sensitivity in biosensing applications, particularly for detecting C-ERB2, a crucial protein associated with various cancers. The device architecture, simulation models, electrostatics, and sensitivity analysis are comprehensively examined. The findings underscore the significance of inter-channel coupling in optimizing biosensor performance, offering valuable insights for the advancement of biosensing technologies.
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页数:11
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