Efficient solution-processed NIR-PLEDs doped with one [Ir(C∧N)(C'∧N') (N''∧O)-tris-heteroleptic Ir(III)-complex NIR-phosphor

Among reliable solution-processed NIR-OLEDs/PLEDs doped with NIR-emissive iridium(III)-complexes, high-performance fully-solution-processed NIR-PLEDs remain a great challenge. Herein, through the C-H activation of IrCl3 center dot 3H(2)O (Method A) or [Ir(COD)(Cl)] 2 (Method B) with equimolar amount of the Hiqbt ((HCN)-N-boolean AND) and Hdpqx (HC'N-boolean AND') ligands, and the subsequent metalation with the N"(OH)-O-boolean AND-ancillary ligand Hpbi, a new [Ir((CN)-N-boolean AND) (C'N-boolean AND')(N''O-boolean AND)]-tris-heteroleptic Ir(III)-complex [Ir(iqbt)(dpqx)(pbi)] (a relatively higher total yield of 41 % from Method B than that (19 %) from Method A) was obtained. Besides the NIR-emission (lambda(PL) = 710 nm) responsible from the highly conjugated Hiqbt ligand, its short (T)1-decayed lifetime of 0.48 mu s while the large Phi(PL) of 0.37, are confirmed to correlate with the robust and low-symmetry geometry structure in the premise of T-1-nature of (LC)-L-3/(MLCT)-M-3-admixed transitions with the 3ILCT-dominant (Hiqbt; 74.49 %). Moreover, through the low-cost solution-processing or fully-solution-processing, the [Ir(iqbt)(dpqx)(pbi)] doped NIR-PLED-A or NIR-PLED-B was realized, respectively, whose high-performance (eta Max/EQE = 6.61 % versus 5.31 %; lambda(EL) = 706/707 nm) should be resulted from the equivalent carries' injection/transport from TmPyPB-assisted LiF/Al cathode while Ba/Al cathode.