Numerical design of non-toxic high-efficiency tandem solar cell with distinct hole transport materials

被引:4
|
作者
Cheragee, Sheikh Hasib [1 ,2 ]
Akhi, Jannatul Afroj [3 ]
Dev, Mishion [4 ]
Haque, Md. Mahfuzul [5 ]
Alam, Mohammad Jahangir [1 ]
机构
[1] Bangladesh Univ Engn & Technol, Dept Elect & Elect Engn, Dhaka 1000, Bangladesh
[2] State Univ Bangladesh, Dept Comp Sci & Engn, Dhaka 1461, Bangladesh
[3] Rajshahi Univ Engn & Technol, Dept Elect & Elect Engn, Rajshahi 6204, Bangladesh
[4] Northern Univ Bangladesh, Dept Text Engn, Dhaka 1230, Bangladesh
[5] Bangamata Sheikh Fojilatunnesa Mujib Sci & Techno, Dept Elect & Elect Engn, Jamalpur 2012, Bangladesh
关键词
Simulation; Efficiency; Solar cell; Absorber; Defect density; PERFORMANCE ANALYSIS; SIMULATION; IMPROVE; LAYER; OXIDE;
D O I
10.1016/j.tsf.2024.140432
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The metal-halide perovskite is at the forefront of photovoltaic research and has the potential to combine low manufacturing costs with excellent power conversion efficiency. In this study, a solar cell capacitance simulator was used to analyze the performance of a tandem solar cell in which MASnI3 was used as the lower cell active layer, and NaZn0.7Cu0.3Br3 was used as the upper cell active layer. The primary objective of this research is to search for a device structure with enhanced efficiency. Here, it is evaluated how absorber thickness, temperature, hole transport layer, defect density, and metal work function affect solar cell performance to reach this aim. After looking at the data for several different solar cell configurations, it is seen that indium tin oxide (ITO) / titanium dioxide (TiO2)/sodium zinc copper bromide (NaZn0.7Cu0.3Br3)/ methylammonium tin iodide (MASnI3) / copper oxide (CuO)/gold (Au) offers the best efficiency at 32.58 %, fill factor at 82.19 %, short circuit current density at 34.8389 mA/cm2, and open circuit voltage at 1.1375 Vs. Device simulations showed an optimal MASnI3 absorber thickness of about 1 mu m. Finally, the simulation results reveal that the device's efficiency declines when the absorber's defect density and cell operation temperature rise. The device topologies are stable at around 300 Kelvin. Last but not least, any conductive material can be used as an anode if it has a work function that is more than or roughly equivalent to 5.10 eV.
引用
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页数:9
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