Cu metallization of Al2O3 ceramics via CuO reduction: Role of SiO2 additive and sintering atmosphere

A Cu-coated Al2O3 substrates which can be used for power modules are prepared via sintering and reduction of CuO-SiO2 film onto the surface of Al2O3 ceramic without precious metal brazing filler or high-vacuum equipment. This method has a significant cost advantage over the existing technology. Effects of oxygen partial pressure from sintering atmosphere and SiO2 content on microstructure and mechanical properties of Cu/Al2O3 interface are systematically investigated. Phase compositions and morphologies of sintered Cu2O layer, reduced Cu layer and reactive layer are characterized via X-ray diffraction and scanning electron microscopy. In addition, physicochemical changes within CuO-SiO2 during sintering are characterized by thermogravimetry-differential scanning calorimeter. It is found that oxygen and SiO2 can promote the generation of Cu2O-CuO-SiO2 eutectic phase with low melting point upon sintering, which increases the thickness of reaction layer and the densification of Cu layer. The shear strength between the Cu layer and the Al2O3 substrate is enhanced with the increase in Cu layer densification degree, while varying in irregular manner with the thickness of reaction layer. In particular, the highest shear strength of 62.70 MPa is obtained at oxygen partial pressure of 0.02 atm and SiO2 content of 1.5 wt%.