Design and characterization of a novel low temperature wafer level bonding technology

被引：0
|
作者：
Zhu, Chunsheng [1 ]
Zhang, Lichao [1 ]
Zhong, Jingxin [1 ]
机构：
[1] PLA Strateg Support Force Informat Engn Univ, Zhengzhou, Peoples R China
来源：
2023 24TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY, ICEPT | 2023年
关键词：
3D integration; Wafer level bonding; Cu-Sn-In ternary system;
D O I：
10.1109/ICEPT59018.2023.10492285
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A wafer level bonding technology based on Cu-Sn-In ternary material system was investigated to realize low temperature 3D interconnections. The bonding process was dedicated designed and optimized. Experiments with different bonding temperature was conducted and compared and the lowest bonding temperature was 170 degrees C. The microstructure analysis indicated that bonding interface at 170 degrees C was composed of Cu/Cu-6(Sn,In)s/Cu and with temperature increasing, Cu-3(Sn,In)s phase would take form. The results of shear strength, pull test, electrical resistance and thermal cycling reliability test manifested that the bonding structure have sufficient bonding strength, good conductivity, and reliability for application.
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页数：4
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